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H7N1004DL-VB Product details
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H7N1004DL-VB MOSFET Product Introduction
**H7N1004DL-VB** is a single N-channel MOSFET in a TO251 package, designed for efficient power management and switching applications. It has a drain-source voltage (VDS) of 100V and a maximum drain current (ID) of 35A, making it ideal for circuits that require high voltage and high current capabilities. Its Trench technology enables the device to provide excellent switching performance while maintaining low on-resistance, thereby improving system efficiency and reducing power consumption.
**H7N1004DL-VB** is a single N-channel MOSFET in a TO251 package, designed for efficient power management and switching applications. It has a drain-source voltage (VDS) of 100V and a maximum drain current (ID) of 35A, making it ideal for circuits that require high voltage and high current capabilities. Its Trench technology enables the device to provide excellent switching performance while maintaining low on-resistance, thereby improving system efficiency and reducing power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 35A | 36mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
H7N1004DL-VB MOSFET Detailed parameter description
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Drain to source voltage (VDS)**: 100V
- **Gate to source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 36mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 35A
- **Technology**: Trench technology
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Drain to source voltage (VDS)**: 100V
- **Gate to source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 36mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 35A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
1. **Power management system**: The high voltage and high current handling capabilities of the H7N1004DL-VB make it ideal for high-voltage buck converters and boost converters in power management systems. Its low on-resistance characteristics help improve conversion efficiency and reduce power losses, especially in applications with high power density requirements.
2. **Industrial automation**: This MOSFET performs well in industrial automation equipment such as motor drives and control systems. Its high current carrying capacity and fast switching performance ensure stable operation and precise control of motors, and is suitable for various industrial control modules.
3. **LED driver**: The H7N1004DL-VB is suitable for applications that require efficient driving of high-power LEDs. It can help design LED lighting systems with high energy efficiency, especially in scenarios that require high brightness and low power consumption, such as outdoor lighting and commercial lighting.
4. **Automotive electronic systems**: In the field of automotive electronics, this MOSFET can be used in automotive power modules and electric equipment control. Its high voltage tolerance and low on-resistance enable it to withstand harsh operating conditions in automotive circuits and maintain stable performance.
These application examples demonstrate the wide application potential of the H7N1004DL-VB MOSFET in fields requiring high efficiency and high reliability, especially in power management and drive control scenarios that require high current handling and low power consumption.
1. **Power management system**: The high voltage and high current handling capabilities of the H7N1004DL-VB make it ideal for high-voltage buck converters and boost converters in power management systems. Its low on-resistance characteristics help improve conversion efficiency and reduce power losses, especially in applications with high power density requirements.
2. **Industrial automation**: This MOSFET performs well in industrial automation equipment such as motor drives and control systems. Its high current carrying capacity and fast switching performance ensure stable operation and precise control of motors, and is suitable for various industrial control modules.
3. **LED driver**: The H7N1004DL-VB is suitable for applications that require efficient driving of high-power LEDs. It can help design LED lighting systems with high energy efficiency, especially in scenarios that require high brightness and low power consumption, such as outdoor lighting and commercial lighting.
4. **Automotive electronic systems**: In the field of automotive electronics, this MOSFET can be used in automotive power modules and electric equipment control. Its high voltage tolerance and low on-resistance enable it to withstand harsh operating conditions in automotive circuits and maintain stable performance.
These application examples demonstrate the wide application potential of the H7N1004DL-VB MOSFET in fields requiring high efficiency and high reliability, especially in power management and drive control scenarios that require high current handling and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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