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H7N1004AB-VB Product details

Product introduction:

1. Product Introduction

The H7N1004AB-VB is a high-performance single N-channel MOSFET in a TO220 package, suitable for applications requiring medium-to-high voltage and high current handling capabilities. The device has a drain-to-source voltage (VDS) of 100V, a gate-to-source voltage (VGS) of ±20V, and a gate-to-source threshold voltage (Vth) of 1.8V. The on-resistance is 38mΩ at a VGS of 4.5V and 36mΩ at a VGS of 10V, and the drain current (ID) can reach 55A. The H7N1004AB-VB utilizes advanced Trench technology to provide excellent conductivity and efficiency, and is particularly suitable for power conversion and management applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 100V 1.8V 55A 36mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 100V 1.8V 55A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 100V 1.8V 55A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
2. Detailed parameter description

- **Package type**: TO220
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 38mΩ @ VGS = 4.5V
- 36mΩ @ VGS = 10V
- **Drain current (ID)**: 55A
- **Technology**: Trench
- **Operating temperature range**: Generally -55°C to +175°C (for specific parameters, please check the product data sheet)
- **Maximum power consumption (Ptot)**: Please check the product data sheet for specific parameters
- **Reverse recovery time (trr)**: Please refer to the product data sheet for specific parameters

Domain and module applications:

3. Applicable fields and module application examples

Due to its excellent current handling capability and low on-resistance, the H7N1004AB-VB MOSFET is very suitable for high-efficiency power conversion and control applications in the following fields and modules:

1. **Power converters and inverters**: This MOSFET enables efficient power conversion in AC-DC and DC-DC power converters, especially for solar inverters, UPS systems and industrial power equipment.

2. **Motor drive control**: In industrial and household motor drive applications, the H7N1004AB-VB can be used in motor control circuits to provide stable power output and effective heat dissipation management.

3. **Battery Management System (BMS)**: Suitable for battery management systems in electric and hybrid vehicles, the H7N1004AB-VB MOSFET helps manage the battery charging and discharging process, improving the overall efficiency and reliability of the system.

4. **Load Switches and Protection Circuits**: This device is suitable for load switches and protection circuits that require high current handling capabilities and has a wide range of applications in consumer electronics, communication equipment, and industrial automation.

5. **Photovoltaic Systems**: The H7N1004AB-VB is used in photovoltaic (PV) systems for power optimization and conversion modules of solar panels, supporting efficient energy conversion and storage.

These application examples demonstrate the wide applicability of the H7N1004AB-VB in different fields, especially those with high power efficiency and high current requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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