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H7N1002LS-VB Product details
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H7N1002LS-VB MOSFET Product Introduction
The H7N1002LS-VB is a high-performance single N-channel MOSFET in a TO263 package, designed for high power and high current applications. It has a drain-source voltage (VDS) rating of 100V and a drain current (ID) of up to 100A, capable of maintaining low on-resistance at high currents. This MOSFET uses advanced Trench technology to ensure minimal losses during conduction, making it ideal for demanding power conversion and power management applications.
The H7N1002LS-VB is a high-performance single N-channel MOSFET in a TO263 package, designed for high power and high current applications. It has a drain-source voltage (VDS) rating of 100V and a drain current (ID) of up to 100A, capable of maintaining low on-resistance at high currents. This MOSFET uses advanced Trench technology to ensure minimal losses during conduction, making it ideal for demanding power conversion and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
H7N1002LS-VB MOSFET Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 23mΩ @ VGS = 4.5V; 10mΩ @ VGS = 10V
- **Drain current (ID)**: 100A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 23mΩ @ VGS = 4.5V; 10mΩ @ VGS = 10V
- **Drain current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
H7N1002LS-VB MOSFET Applications and Modules
The high current and high voltage capabilities of the H7N1002LS-VB, as well as its low on-resistance, make it an excellent choice in the following areas and modules:
1. **Power Management System**: The H7N1002LS-VB is ideal for use in high-efficiency power management systems, such as server power modules and telecom equipment power management. These applications need to handle high currents and have high requirements for conduction losses to ensure efficient operation of the overall system.
2. **Motor Drive and Control**: In industrial and household motor control applications, this MOSFET is able to provide stable and efficient current control, and is particularly suitable for servo systems, automation control, and home appliances that require precise current management.
3. **Automotive Electronic Systems**: Due to its high current capability and good switching performance, the H7N1002LS-VB is an ideal choice for automotive electronic systems, such as electric vehicle (EV) battery management systems, on-board chargers, and drive modules.
4. **Uninterruptible Power Supply (UPS) System**: This MOSFET can effectively manage high current and voltage conversion, and is an ideal choice for inverter modules in UPS systems to ensure the stability and efficiency of power supply.
5. **Solar Inverter**: In solar power generation systems, the H7N1002LS-VB is suitable for inverter modules to convert DC power to AC power through efficient power switching functions, maximize energy utilization, and ensure stable system operation.
The H7N1002LS-VB is an excellent performance MOSFET, especially suitable for applications requiring high current and high efficiency, such as power management, motor control, automotive electronics, and renewable energy systems.
The high current and high voltage capabilities of the H7N1002LS-VB, as well as its low on-resistance, make it an excellent choice in the following areas and modules:
1. **Power Management System**: The H7N1002LS-VB is ideal for use in high-efficiency power management systems, such as server power modules and telecom equipment power management. These applications need to handle high currents and have high requirements for conduction losses to ensure efficient operation of the overall system.
2. **Motor Drive and Control**: In industrial and household motor control applications, this MOSFET is able to provide stable and efficient current control, and is particularly suitable for servo systems, automation control, and home appliances that require precise current management.
3. **Automotive Electronic Systems**: Due to its high current capability and good switching performance, the H7N1002LS-VB is an ideal choice for automotive electronic systems, such as electric vehicle (EV) battery management systems, on-board chargers, and drive modules.
4. **Uninterruptible Power Supply (UPS) System**: This MOSFET can effectively manage high current and voltage conversion, and is an ideal choice for inverter modules in UPS systems to ensure the stability and efficiency of power supply.
5. **Solar Inverter**: In solar power generation systems, the H7N1002LS-VB is suitable for inverter modules to convert DC power to AC power through efficient power switching functions, maximize energy utilization, and ensure stable system operation.
The H7N1002LS-VB is an excellent performance MOSFET, especially suitable for applications requiring high current and high efficiency, such as power management, motor control, automotive electronics, and renewable energy systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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