中文
English
H7N1002LM-VB Product details
Back to previous pageProduct introduction：
1. H7N1002LM-VB Product Introduction
H7N1002LM-VB is a high-performance single-N-Channel MOSFET in TO251 package, designed for high-efficiency power management and switching applications. The device has a drain-source voltage (VDS) of 100V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.8V. With Trench technology, the H7N1002LM-VB achieves an on-resistance (RDS(ON)) of 12.5mΩ at a VGS of 10V and can carry a drain current (ID) of 65A, making the device ideal for applications requiring high efficiency and high current handling capabilities.
H7N1002LM-VB is a high-performance single-N-Channel MOSFET in TO251 package, designed for high-efficiency power management and switching applications. The device has a drain-source voltage (VDS) of 100V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.8V. With Trench technology, the H7N1002LM-VB achieves an on-resistance (RDS(ON)) of 12.5mΩ at a VGS of 10V and can carry a drain current (ID) of 65A, making the device ideal for applications requiring high efficiency and high current handling capabilities.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 65A | 12.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 65A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 65A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. H7N1002LM-VB Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 12.5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 65A
- **Technology**: Trench technology
- **Package type**: TO251
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 12.5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 65A
- **Technology**: Trench technology
Domain and module applications：
3. Application fields and module examples
The low on-resistance and high current handling capability of H7N1002LM-VB make it an ideal choice for a variety of applications. Here are some typical application scenarios:
1. **Power management and conversion**:
In switching power supplies and DC-DC converters, the high efficiency and low on-resistance characteristics of H7N1002LM-VB make it a core device for power conversion modules. It can provide low power consumption and high efficiency power conversion at high voltage, improving the overall performance of the power module.
2. **Motor drive system**:
H7N1002LM-VB can be used in motor drive circuits, especially in industrial automation and home appliances. Its high current handling capability and low on-resistance help improve the operating efficiency of the motor, reduce power loss, and enhance the reliability and stability of the system.
3. **Power tools and equipment**:
This MOSFET is also suitable for power management modules in power tools and portable devices. The H7N1002LM-VB is able to withstand high currents and has low losses, ensuring that electric devices can still operate efficiently under high loads, thereby extending the service life of the equipment.
4. **Automotive Electronics**:
The H7N1002LM-VB is suitable for power distribution and management systems in automotive electronic devices. Its high withstand voltage and low on-resistance characteristics can provide stable performance in the harsh environment of the car, ensuring the efficiency and reliability of the power system.
The H7N1002LM-VB is a versatile MOSFET suitable for various power management and drive applications that require high performance and high current handling capabilities.
The low on-resistance and high current handling capability of H7N1002LM-VB make it an ideal choice for a variety of applications. Here are some typical application scenarios:
1. **Power management and conversion**:
In switching power supplies and DC-DC converters, the high efficiency and low on-resistance characteristics of H7N1002LM-VB make it a core device for power conversion modules. It can provide low power consumption and high efficiency power conversion at high voltage, improving the overall performance of the power module.
2. **Motor drive system**:
H7N1002LM-VB can be used in motor drive circuits, especially in industrial automation and home appliances. Its high current handling capability and low on-resistance help improve the operating efficiency of the motor, reduce power loss, and enhance the reliability and stability of the system.
3. **Power tools and equipment**:
This MOSFET is also suitable for power management modules in power tools and portable devices. The H7N1002LM-VB is able to withstand high currents and has low losses, ensuring that electric devices can still operate efficiently under high loads, thereby extending the service life of the equipment.
4. **Automotive Electronics**:
The H7N1002LM-VB is suitable for power distribution and management systems in automotive electronic devices. Its high withstand voltage and low on-resistance characteristics can provide stable performance in the harsh environment of the car, ensuring the efficiency and reliability of the power system.
The H7N1002LM-VB is a versatile MOSFET suitable for various power management and drive applications that require high performance and high current handling capabilities.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
