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H7N0608LM-VB Product details
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H7N0608LM-VB MOSFET Product Introduction
The H7N0608LM-VB is a single N-channel MOSFET in a TO263 package, designed for high power and high efficiency applications. Its 60V drain-source voltage (VDS) and 150A maximum drain current (ID) make it an ideal choice for high current applications such as power management and motor drive. Based on advanced Trench technology, the device has an on-resistance as low as 4mΩ at VGS=10V, significantly reducing switching losses and conduction losses.
The H7N0608LM-VB is a single N-channel MOSFET in a TO263 package, designed for high power and high efficiency applications. Its 60V drain-source voltage (VDS) and 150A maximum drain current (ID) make it an ideal choice for high current applications such as power management and motor drive. Based on advanced Trench technology, the device has an on-resistance as low as 4mΩ at VGS=10V, significantly reducing switching losses and conduction losses.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
H7N0608LM-VB MOSFET Detailed parameter description
- **Package**: TO263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 150A
- **Technology type**: Trench technology
- **Package**: TO263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 150A
- **Technology type**: Trench technology
Domain and module applications：
Applications and modules of H7N0608LM-VB MOSFET
With its high current carrying capability and low on-resistance, H7N0608LM-VB MOSFET has wide applicability in multiple application areas, as follows:
1. **Power Management and Converters**: This MOSFET is well suited for high-efficiency power management applications such as synchronous rectifiers, DC-DC converters, and battery management systems (BMS). Low on-resistance ensures low losses at high currents, thereby improving overall system efficiency.
2. **Motor Drive and Control**: H7N0608LM-VB excels in motor drive and control systems, and is suitable for motor control modules in power tools, fan drives, and electric vehicles. Its high current capability ensures stable performance under high load conditions.
3. **Automotive Electronic Systems**: In automotive electronic systems, this MOSFET can be used in electric power steering (EPS), power window controls, and various powertrain modules. Its durability and low loss characteristics help extend system life and improve energy efficiency.
4. **Industrial Automation and Control**: This device can be used in power control modules, servo drives, and PLC controllers in industrial automation. High current carrying capacity and low conduction losses enable it to maintain efficient and reliable operation in industrial environments.
5. **Telecom Equipment and Server Power**: H7N0608LM-VB is also suitable for telecom base station power supplies and server power management modules. Low on-resistance and high efficiency help reduce overall power consumption and support higher current density to meet the stringent reliability and performance requirements of modern telecom and data centers.
In summary, the H7N0608LM-VB MOSFET is an efficient and reliable solution that is widely used in power management, motor drives, automotive electronics, industrial automation, and telecom equipment. Its low on-resistance and high current capability give it a significant advantage in high-power applications.
With its high current carrying capability and low on-resistance, H7N0608LM-VB MOSFET has wide applicability in multiple application areas, as follows:
1. **Power Management and Converters**: This MOSFET is well suited for high-efficiency power management applications such as synchronous rectifiers, DC-DC converters, and battery management systems (BMS). Low on-resistance ensures low losses at high currents, thereby improving overall system efficiency.
2. **Motor Drive and Control**: H7N0608LM-VB excels in motor drive and control systems, and is suitable for motor control modules in power tools, fan drives, and electric vehicles. Its high current capability ensures stable performance under high load conditions.
3. **Automotive Electronic Systems**: In automotive electronic systems, this MOSFET can be used in electric power steering (EPS), power window controls, and various powertrain modules. Its durability and low loss characteristics help extend system life and improve energy efficiency.
4. **Industrial Automation and Control**: This device can be used in power control modules, servo drives, and PLC controllers in industrial automation. High current carrying capacity and low conduction losses enable it to maintain efficient and reliable operation in industrial environments.
5. **Telecom Equipment and Server Power**: H7N0608LM-VB is also suitable for telecom base station power supplies and server power management modules. Low on-resistance and high efficiency help reduce overall power consumption and support higher current density to meet the stringent reliability and performance requirements of modern telecom and data centers.
In summary, the H7N0608LM-VB MOSFET is an efficient and reliable solution that is widely used in power management, motor drives, automotive electronics, industrial automation, and telecom equipment. Its low on-resistance and high current capability give it a significant advantage in high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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