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H7N0608LD-VB Product details
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H7N0608LD-VB MOSFET Product Introduction
**H7N0608LD-VB** is a high-performance N-Channel MOSFET, using TO262 package and advanced Trench technology. It is designed for applications with high current and low on-resistance requirements, capable of providing up to 210A of drain current and a maximum drain-source voltage of 60V, suitable for a variety of high-efficiency power electronic devices. The device has an on-resistance of only 3mΩ at VGS=10V, has excellent switching speed and low power consumption, and is ideal for high-power applications.
**H7N0608LD-VB** is a high-performance N-Channel MOSFET, using TO262 package and advanced Trench technology. It is designed for applications with high current and low on-resistance requirements, capable of providing up to 210A of drain current and a maximum drain-source voltage of 60V, suitable for a variety of high-efficiency power electronic devices. The device has an on-resistance of only 3mΩ at VGS=10V, has excellent switching speed and low power consumption, and is ideal for high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | 3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Package type**: TO262
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 3mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 210A
- **Technology**: Trench
- **Package type**: TO262
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 3mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 210A
- **Technology**: Trench
Domain and module applications：
Applications and modules
1. **High-power switching power supply**:
H7N0608LD-VB is suitable for high-power switching power supply applications, and can provide extremely low conduction losses under high current conditions, improving the overall efficiency of the system. It is widely used in server power supplies, data center power modules and industrial power equipment.
2. **Electric vehicles and hybrid systems**:
The high current carrying capacity of this MOSFET makes it very suitable for use in power control modules of electric vehicles and hybrid systems. In these applications, it can efficiently manage the power transmission from the battery to the motor, ensure stable system operation and improve the vehicle's endurance.
3. **Motor drive and industrial control**:
H7N0608LD-VB performs well in high-current industrial motor drive and control systems, and can effectively switch and control high-power motors. This makes it suitable for industrial automation equipment, large machinery, and motor control modules for power tools.
4. **Photovoltaic inverter and energy storage system**:
This MOSFET is also suitable for applications in photovoltaic inverters and energy storage systems. Its high efficiency characteristics help maximize the output power of solar panels and optimize the charging and discharging process of battery storage systems, and is an indispensable part of energy management systems.
1. **High-power switching power supply**:
H7N0608LD-VB is suitable for high-power switching power supply applications, and can provide extremely low conduction losses under high current conditions, improving the overall efficiency of the system. It is widely used in server power supplies, data center power modules and industrial power equipment.
2. **Electric vehicles and hybrid systems**:
The high current carrying capacity of this MOSFET makes it very suitable for use in power control modules of electric vehicles and hybrid systems. In these applications, it can efficiently manage the power transmission from the battery to the motor, ensure stable system operation and improve the vehicle's endurance.
3. **Motor drive and industrial control**:
H7N0608LD-VB performs well in high-current industrial motor drive and control systems, and can effectively switch and control high-power motors. This makes it suitable for industrial automation equipment, large machinery, and motor control modules for power tools.
4. **Photovoltaic inverter and energy storage system**:
This MOSFET is also suitable for applications in photovoltaic inverters and energy storage systems. Its high efficiency characteristics help maximize the output power of solar panels and optimize the charging and discharging process of battery storage systems, and is an indispensable part of energy management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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