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H7N0603DSTL-E-VB Product details
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H7N0603DSTL-E-VB MOSFET Product Introduction
**H7N0603DSTL-E-VB** is a high-performance N-channel MOSFET in a TO252 package with good conduction performance and high current handling capability. Designed for applications requiring efficient power management, the device has a maximum drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 58A, making it ideal for use in a variety of power supplies and switching circuits. Its low on-resistance (RDS(ON)) combined with Trench technology enables it to provide high efficiency while maintaining low power consumption.
**H7N0603DSTL-E-VB** is a high-performance N-channel MOSFET in a TO252 package with good conduction performance and high current handling capability. Designed for applications requiring efficient power management, the device has a maximum drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 58A, making it ideal for use in a variety of power supplies and switching circuits. Its low on-resistance (RDS(ON)) combined with Trench technology enables it to provide high efficiency while maintaining low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
H7N0603DSTL-E-VB MOSFET Detailed parameter description
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain to Source Voltage (VDS)**: 60V
- **Gate to Source Voltage (VGS)**: ±20V
- **Gate Threshold Voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 58A
- **Technology**: Trench technology
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain to Source Voltage (VDS)**: 60V
- **Gate to Source Voltage (VGS)**: ±20V
- **Gate Threshold Voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 58A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
1. **DC-DC converter**: The low on-resistance and high current capability of the H7N0603DSTL-E-VB make it ideal for use in DC-DC converters. These converters are used in electronic devices to provide regulated power supplies, and the efficient switching performance of the MOSFET can reduce power consumption and improve conversion efficiency, especially in high-current applications.
2. **Battery management system**: This MOSFET performs well in battery management systems (BMS), especially in charge and discharge management of electric vehicles and portable devices. Its high current handling capability ensures efficient charging and discharging of the battery while maintaining low conduction losses to extend battery life.
3. **Motor drive**: In small motor drive applications such as drones, power tools, and small appliances, the H7N0603DSTL-E-VB provides the necessary current handling capability and switching speed to ensure stable and efficient motor operation, suitable for scenarios requiring precise control and fast response.
4. **Automotive electronics**: H7N0603DSTL-E-VB is suitable for power management modules in the automotive electronics field (such as vehicle power and lighting systems). Its high current handling capability and durability enable it to perform well in harsh automotive environments, ensuring system reliability and safety.
These application examples demonstrate the wide application potential of H7N0603DSTL-E-VB in the fields of power management, drive control and high-efficiency requirements, especially in power supplies and switching circuits that require high efficiency and high stability.
1. **DC-DC converter**: The low on-resistance and high current capability of the H7N0603DSTL-E-VB make it ideal for use in DC-DC converters. These converters are used in electronic devices to provide regulated power supplies, and the efficient switching performance of the MOSFET can reduce power consumption and improve conversion efficiency, especially in high-current applications.
2. **Battery management system**: This MOSFET performs well in battery management systems (BMS), especially in charge and discharge management of electric vehicles and portable devices. Its high current handling capability ensures efficient charging and discharging of the battery while maintaining low conduction losses to extend battery life.
3. **Motor drive**: In small motor drive applications such as drones, power tools, and small appliances, the H7N0603DSTL-E-VB provides the necessary current handling capability and switching speed to ensure stable and efficient motor operation, suitable for scenarios requiring precise control and fast response.
4. **Automotive electronics**: H7N0603DSTL-E-VB is suitable for power management modules in the automotive electronics field (such as vehicle power and lighting systems). Its high current handling capability and durability enable it to perform well in harsh automotive environments, ensuring system reliability and safety.
These application examples demonstrate the wide application potential of H7N0603DSTL-E-VB in the fields of power management, drive control and high-efficiency requirements, especially in power supplies and switching circuits that require high efficiency and high stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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