中文
English
H7N0405LSTL-E-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
**H7N0405LSTL-E-VB** is a high-performance single N-channel MOSFET designed in TO263 package, optimized for handling high-current and low-voltage applications. Its maximum drain-source voltage (VDS) is 40V and its maximum drain current (ID) is 100A, which can provide excellent current handling capabilities in high-power applications. The on-resistance (RDS(ON)) of the device is 6mΩ at a VGS of 4.5V and drops to 5mΩ at a VGS of 10V, ensuring low conduction losses and improving overall efficiency. Using Trench technology, the H7N0405LSTL-E-VB achieves a good balance between switching speed, power consumption and thermal performance, and is suitable for demanding power supply and motor control applications.
**H7N0405LSTL-E-VB** is a high-performance single N-channel MOSFET designed in TO263 package, optimized for handling high-current and low-voltage applications. Its maximum drain-source voltage (VDS) is 40V and its maximum drain current (ID) is 100A, which can provide excellent current handling capabilities in high-power applications. The on-resistance (RDS(ON)) of the device is 6mΩ at a VGS of 4.5V and drops to 5mΩ at a VGS of 10V, ensuring low conduction losses and improving overall efficiency. Using Trench technology, the H7N0405LSTL-E-VB achieves a good balance between switching speed, power consumption and thermal performance, and is suitable for demanding power supply and motor control applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
3. Application fields and module examples
**H7N0405LSTL-E-VB** MOSFET is widely used in the following fields and modules:
1. **Power management system**: In power management systems, especially DC-DC converters and power distribution modules, this MOSFET is widely used to improve system efficiency and reduce energy loss due to its low on-resistance and high current handling capability.
2. **Motor control**: In the field of motor control, such as power tools, home appliance motor controllers and industrial motor drives, H7N0405LSTL-E-VB can provide high current driving capability to ensure efficient and reliable motor operation.
3. **High power switching**: In high power switching applications, such as power amplifiers and high current switching modules, this MOSFET ensures efficient current transmission and low power consumption due to its low on-resistance and excellent current carrying capability.
4. **Automotive Electronics**: In automotive electronic applications such as power window control, starter control and battery management systems, this MOSFET performs well and can provide stable and reliable current control and power management in harsh automotive environments.
**H7N0405LSTL-E-VB** MOSFET is widely used in the following fields and modules:
1. **Power management system**: In power management systems, especially DC-DC converters and power distribution modules, this MOSFET is widely used to improve system efficiency and reduce energy loss due to its low on-resistance and high current handling capability.
2. **Motor control**: In the field of motor control, such as power tools, home appliance motor controllers and industrial motor drives, H7N0405LSTL-E-VB can provide high current driving capability to ensure efficient and reliable motor operation.
3. **High power switching**: In high power switching applications, such as power amplifiers and high current switching modules, this MOSFET ensures efficient current transmission and low power consumption due to its low on-resistance and excellent current carrying capability.
4. **Automotive Electronics**: In automotive electronic applications such as power window control, starter control and battery management systems, this MOSFET performs well and can provide stable and reliable current control and power management in harsh automotive environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
