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H7N0405LM-VB Product details

Product introduction:

H7N0405LM-VB MOSFET Product Introduction

H7N0405LM-VB is a high-performance single N-channel MOSFET in TO251 package, designed based on advanced Trench technology. With a drain-source voltage (VDS) of 40V and a maximum drain current (ID) of 85A, the device is suitable for power management applications that require high performance and reliability. Its low on-resistance is only 5mΩ at VGS=10V, making it an ideal choice for low power and high current applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO251 Single-N 40V 2.5V 85A 5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO251 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO251 Single-N 40V 2.5V 85A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO251 Single-N 40V 2.5V 85A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO251 Single-N
H7N0405LM-VB MOSFET Detailed parameter description

- **Package**: TO251
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6.5mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 85A
- **Technology type**: Trench technology

Domain and module applications:

Applications and modules of H7N0405LM-VB MOSFET

With its high current handling capability and extremely low on-resistance, the H7N0405LM-VB MOSFET is well suited for multiple applications and modules, as follows:

1. **Power Management and Switching Power Supply**: The H7N0405LM-VB excels in high-efficiency power management applications, especially in switching power supplies (SMPS) and DC-DC converters. The low on-resistance reduces power losses during the power conversion process, thereby improving the efficiency of the overall system.

2. **Power Tools**: Due to its high current capability and low on-resistance, this MOSFET is well suited for use in power control modules for power tools. It is able to handle high current demands and provide stable performance, ensuring the reliability and efficiency of the tool.

3. **Automotive Electronics**: The H7N0405LM-VB is suitable for high-current applications in automotive electronics, such as motor drives, battery management systems, and power distribution modules. Its high current handling capability and low loss characteristics enable it to improve the efficiency of the vehicle's electrical system and reduce heat generation.

4. **Industrial Automation**: In the field of industrial automation, this MOSFET can be used in motor control, servo drives, and power control modules. Its low on-resistance and high current capability enable it to provide reliable performance in harsh industrial environments.

5. **Computing and Communication Equipment**: In computing and communication equipment, the H7N0405LM-VB can be used for processor power management and power modules for communication equipment. Its low on-resistance helps reduce the overall power consumption of the system, thereby extending the life of the equipment and improving efficiency.

In summary, the H7N0405LM-VB MOSFET is widely used in power management, power tools, automotive electronics, industrial automation, and computing and communication equipment with its high current handling capability, low on-resistance, and high reliability. It is an ideal choice for high-performance applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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