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H7N0401LM-VB Product details
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1. H7N0401LM-VB MOSFET Product Introduction
H7N0401LM-VB is a high-performance N-channel MOSFET with a TO-263 package type. This MOSFET is manufactured using advanced Trench technology and is designed for high current and low voltage applications. Its drain-source voltage (VDS) is as high as 40V, which can provide reliable performance in various low-voltage power management and switch control applications. The on-resistance (RDS(ON)) of the H7N0401LM-VB is very low, at 2.5mΩ at a gate-source voltage of 4.5V and 2mΩ at a gate-source voltage of 10V, supporting a drain current (ID) of up to 150A, making it suitable for applications that require high current handling and efficient power management.
H7N0401LM-VB is a high-performance N-channel MOSFET with a TO-263 package type. This MOSFET is manufactured using advanced Trench technology and is designed for high current and low voltage applications. Its drain-source voltage (VDS) is as high as 40V, which can provide reliable performance in various low-voltage power management and switch control applications. The on-resistance (RDS(ON)) of the H7N0401LM-VB is very low, at 2.5mΩ at a gate-source voltage of 4.5V and 2mΩ at a gate-source voltage of 10V, supporting a drain current (ID) of up to 150A, making it suitable for applications that require high current handling and efficient power management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. H7N0401LM-VB MOSFET Detailed parameter description
- **Package**: TO-263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Drain current (ID)**: 150A
- **Technology**: Trench technology
- **Package**: TO-263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Drain current (ID)**: 150A
- **Technology**: Trench technology
Domain and module applications：
3. H7N0401LM-VB MOSFET applicable fields and module application examples
1. **High-power power management**:
H7N0401LM-VB is very suitable for high-power power management applications such as DC-DC converters and power regulators due to its low on-resistance and high current handling capability. It can effectively handle large currents, reduce switching losses, and improve power conversion efficiency, especially in power modules that require high efficiency and compact design.
2. **Electric vehicles and hybrid vehicles**:
In electric vehicles and hybrid vehicles, H7N0401LM-VB is suitable for battery management systems and motor drive modules. Its high current capability and low on-resistance can help optimize the battery charging and discharging process and motor control, improve overall energy efficiency and system reliability, and ensure the stability of automotive electronic systems.
3. **Industrial Motor Drive**:
H7N0401LM-VB can handle high current switching requirements in industrial motor drive systems and is suitable for driving and controlling high-power motors. Its low on-resistance reduces power consumption and improves the efficiency and stability of motor operation, making it suitable for motor drive modules for automation equipment and heavy-duty machinery.
4. **High-efficiency Power Switch**:
This MOSFET can provide low switching losses and high current handling capabilities in high-efficiency power switching applications, such as high-power switching power supplies, inverters, and battery protection circuits. Its low RDS(ON) characteristics help improve system efficiency and reduce power consumption, making it suitable for power modules that require high performance and high reliability.
5. **Consumer Electronics**:
In consumer electronics, such as high-performance chargers and smart devices, H7N0401LM-VB can provide stable and efficient power management due to its high current capability and low on-resistance, improving product performance and user experience.
These application areas demonstrate the wide applicability of H7N0401LM-VB in various high current, low voltage environments. Its excellent performance makes it an indispensable key component in many power management and control systems.
1. **High-power power management**:
H7N0401LM-VB is very suitable for high-power power management applications such as DC-DC converters and power regulators due to its low on-resistance and high current handling capability. It can effectively handle large currents, reduce switching losses, and improve power conversion efficiency, especially in power modules that require high efficiency and compact design.
2. **Electric vehicles and hybrid vehicles**:
In electric vehicles and hybrid vehicles, H7N0401LM-VB is suitable for battery management systems and motor drive modules. Its high current capability and low on-resistance can help optimize the battery charging and discharging process and motor control, improve overall energy efficiency and system reliability, and ensure the stability of automotive electronic systems.
3. **Industrial Motor Drive**:
H7N0401LM-VB can handle high current switching requirements in industrial motor drive systems and is suitable for driving and controlling high-power motors. Its low on-resistance reduces power consumption and improves the efficiency and stability of motor operation, making it suitable for motor drive modules for automation equipment and heavy-duty machinery.
4. **High-efficiency Power Switch**:
This MOSFET can provide low switching losses and high current handling capabilities in high-efficiency power switching applications, such as high-power switching power supplies, inverters, and battery protection circuits. Its low RDS(ON) characteristics help improve system efficiency and reduce power consumption, making it suitable for power modules that require high performance and high reliability.
5. **Consumer Electronics**:
In consumer electronics, such as high-performance chargers and smart devices, H7N0401LM-VB can provide stable and efficient power management due to its high current capability and low on-resistance, improving product performance and user experience.
These application areas demonstrate the wide applicability of H7N0401LM-VB in various high current, low voltage environments. Its excellent performance makes it an indispensable key component in many power management and control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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