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H7N0401LD-VB Product details
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H7N0401LD-VB MOSFET Product Introduction
**H7N0401LD-VB** is a high current, high performance N-channel MOSFET in TO251 package, designed for applications that need to handle high current and low conduction losses. Its maximum drain-source voltage is 40V and the drain current capability is up to 120A, making it an excellent performer in the field of power management and power conversion. This MOSFET uses Trench technology and has an extremely low on-resistance (2mΩ @ VGS = 10V), ensuring efficient power transmission and low power operation.
**H7N0401LD-VB** is a high current, high performance N-channel MOSFET in TO251 package, designed for applications that need to handle high current and low conduction losses. Its maximum drain-source voltage is 40V and the drain current capability is up to 120A, making it an excellent performer in the field of power management and power conversion. This MOSFET uses Trench technology and has an extremely low on-resistance (2mΩ @ VGS = 10V), ensuring efficient power transmission and low power operation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 3V | 120A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
H7N0401LD-VB MOSFET Detailed parameter description
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Drain to Source Voltage (VDS)**: 40V
- **Gate to Source Voltage (VGS)**: ±20V
- **Gate Threshold Voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 120A
- **Technology**: Trench technology
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Drain to Source Voltage (VDS)**: 40V
- **Gate to Source Voltage (VGS)**: ±20V
- **Gate Threshold Voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 120A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
1. **High-efficiency power converters**: The low on-resistance and high current capability of the H7N0401LD-VB make it ideal for use in high-efficiency power converters such as DC-DC converters and synchronous rectifiers. These applications require MOSFETs to maintain low power consumption and high efficiency under high current conditions, thereby improving the performance and stability of the overall power system.
2. **Motor drive systems**: In motor drive and control systems, the high current handling capability and low on-resistance of the H7N0401LD-VB ensure high efficiency and reliable operation of the motor. It is suitable for various power tools, electric vehicles, and industrial motor drive systems, where MOSFETs are required to withstand high currents and maintain efficient power transmission.
3. **Automotive electronics**: The H7N0401LD-VB is also widely used in automotive electronic systems, such as power management modules and electric power steering systems. In these applications, the high current capability and low conduction loss characteristics of the MOSFET ensure the stability and safety of the automotive system, especially when efficient power management is required.
4. **Industrial Power and Switch**: In industrial power and switch applications, the H7N0401LD-VB provides high current switching capability and low power operation. This makes it suitable for power switch modules in industrial automation equipment, factory equipment control systems, and high-power power modules, providing efficient power control and management solutions.
These application scenarios demonstrate the wide applicability of the H7N0401LD-VB MOSFET in situations where high current and low conduction loss are required, especially in power management, motor drive, and automotive electronics.
1. **High-efficiency power converters**: The low on-resistance and high current capability of the H7N0401LD-VB make it ideal for use in high-efficiency power converters such as DC-DC converters and synchronous rectifiers. These applications require MOSFETs to maintain low power consumption and high efficiency under high current conditions, thereby improving the performance and stability of the overall power system.
2. **Motor drive systems**: In motor drive and control systems, the high current handling capability and low on-resistance of the H7N0401LD-VB ensure high efficiency and reliable operation of the motor. It is suitable for various power tools, electric vehicles, and industrial motor drive systems, where MOSFETs are required to withstand high currents and maintain efficient power transmission.
3. **Automotive electronics**: The H7N0401LD-VB is also widely used in automotive electronic systems, such as power management modules and electric power steering systems. In these applications, the high current capability and low conduction loss characteristics of the MOSFET ensure the stability and safety of the automotive system, especially when efficient power management is required.
4. **Industrial Power and Switch**: In industrial power and switch applications, the H7N0401LD-VB provides high current switching capability and low power operation. This makes it suitable for power switch modules in industrial automation equipment, factory equipment control systems, and high-power power modules, providing efficient power control and management solutions.
These application scenarios demonstrate the wide applicability of the H7N0401LD-VB MOSFET in situations where high current and low conduction loss are required, especially in power management, motor drive, and automotive electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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