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H7N0312LSTL-E-VB Product details
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1. Product Introduction
H7N0312LSTL-E-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high current and low on-resistance applications. It has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, suitable for various power management and switch control scenarios. The gate-source threshold voltage (Vth) of H7N0312LSTL-E-VB is 1.7V, the on-resistance (RDS(ON)) is 3.2mΩ at VGS of 4.5V and 2.3mΩ at VGS of 10V, and its maximum drain current (ID) is 150A. This MOSFET uses Trench technology to provide extremely low on-resistance, suitable for applications with high efficiency and high current requirements.
H7N0312LSTL-E-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high current and low on-resistance applications. It has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, suitable for various power management and switch control scenarios. The gate-source threshold voltage (Vth) of H7N0312LSTL-E-VB is 1.7V, the on-resistance (RDS(ON)) is 3.2mΩ at VGS of 4.5V and 2.3mΩ at VGS of 10V, and its maximum drain current (ID) is 150A. This MOSFET uses Trench technology to provide extremely low on-resistance, suitable for applications with high efficiency and high current requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | 2.3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3.2mΩ @ VGS = 4.5V
- 2.3mΩ @ VGS = 10V
- **Drain current (ID)**: 150A
- **Technology**: Trench
- **Operating temperature range**: Generally -55°C to +175°C (For specific parameters, please check the product data sheet)
- **Gate charge (Qg)**: For specific parameters, please check the product data sheet
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3.2mΩ @ VGS = 4.5V
- 2.3mΩ @ VGS = 10V
- **Drain current (ID)**: 150A
- **Technology**: Trench
- **Operating temperature range**: Generally -55°C to +175°C (For specific parameters, please check the product data sheet)
- **Gate charge (Qg)**: For specific parameters, please check the product data sheet
Domain and module applications：
3. Applicable fields and module application examples
The high current handling capability and low on-resistance of the H7N0312LSTL-E-VB enable it to perform well in a variety of high-power applications. Here are a few typical application examples:
1. **High-efficiency power converter**: Due to its low on-resistance and high current capability, the H7N0312LSTL-E-VB is ideal for use in DC-DC converters and synchronous rectifiers, which require high-efficiency switching performance to improve the energy efficiency of the overall system.
2. **Electric vehicle battery management system**: In the battery management system of electric vehicles, this MOSFET can effectively control the flow of current, ensure that the battery works stably during charging and discharging, and prevent overload or overheating.
3. **Motor drive control**: In the motor drive system, the H7N0312LSTL-E-VB is able to handle large current loads and provide efficient motor control and drive capabilities, suitable for applications such as industrial motors, fans, and power tools.
4. **Power switch module**: This MOSFET can be used in various power switch modules, such as switch mode power supplies (SMPS) and inverters. Its high current capability and low on-resistance can significantly improve switching efficiency and reduce energy loss.
5. **Automotive electronic system**: In automotive electronic systems, such as high-power components such as electric power steering (EPS) and starters, the H7N0312LSTL-E-VB provides stable switching performance, supports high current applications, and ensures reliable system operation.
These application examples demonstrate the wide applicability of the H7N0312LSTL-E-VB under high current and high efficiency requirements, especially in high-power and high-efficiency power management and control systems.
The high current handling capability and low on-resistance of the H7N0312LSTL-E-VB enable it to perform well in a variety of high-power applications. Here are a few typical application examples:
1. **High-efficiency power converter**: Due to its low on-resistance and high current capability, the H7N0312LSTL-E-VB is ideal for use in DC-DC converters and synchronous rectifiers, which require high-efficiency switching performance to improve the energy efficiency of the overall system.
2. **Electric vehicle battery management system**: In the battery management system of electric vehicles, this MOSFET can effectively control the flow of current, ensure that the battery works stably during charging and discharging, and prevent overload or overheating.
3. **Motor drive control**: In the motor drive system, the H7N0312LSTL-E-VB is able to handle large current loads and provide efficient motor control and drive capabilities, suitable for applications such as industrial motors, fans, and power tools.
4. **Power switch module**: This MOSFET can be used in various power switch modules, such as switch mode power supplies (SMPS) and inverters. Its high current capability and low on-resistance can significantly improve switching efficiency and reduce energy loss.
5. **Automotive electronic system**: In automotive electronic systems, such as high-power components such as electric power steering (EPS) and starters, the H7N0312LSTL-E-VB provides stable switching performance, supports high current applications, and ensures reliable system operation.
These application examples demonstrate the wide applicability of the H7N0312LSTL-E-VB under high current and high efficiency requirements, especially in high-power and high-efficiency power management and control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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