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H7N0312LM-VB Product details
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H7N0312LM-VB MOSFET Product Introduction
The H7N0312LM-VB is a high-performance single N-channel MOSFET in a TO263 package, designed for low-voltage, high-current applications. This MOSFET can withstand drain-source voltages up to 30V and has very low on-resistance, ensuring high efficiency under high current conditions. It uses Trench technology, which optimizes its conduction performance and switching characteristics, making it excel in high-power applications. Its drain current handling capability of up to 150A makes it suitable for a variety of high-current application scenarios.
The H7N0312LM-VB is a high-performance single N-channel MOSFET in a TO263 package, designed for low-voltage, high-current applications. This MOSFET can withstand drain-source voltages up to 30V and has very low on-resistance, ensuring high efficiency under high current conditions. It uses Trench technology, which optimizes its conduction performance and switching characteristics, making it excel in high-power applications. Its drain current handling capability of up to 150A makes it suitable for a variety of high-current application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | 2.3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
H7N0312LM-VB MOSFET Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3.2mΩ @ VGS = 4.5V
- 2.3mΩ @ VGS = 10V
- **Drain current (ID)**: 150A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3.2mΩ @ VGS = 4.5V
- 2.3mΩ @ VGS = 10V
- **Drain current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
H7N0312LM-VB MOSFET Applications and Modules
The high current handling capability and low on-resistance of the H7N0312LM-VB enable it to excel in the following areas and modules:
1. **Power Management and Converters**: In high-efficiency power management and DC-DC converters, the low on-resistance and high current capability of the H7N0312LM-VB ensure efficient power conversion and management, and is suitable for use in high-power power modules and power adapters.
2. **Electric Vehicle (EV) Systems**: This MOSFET can be used in battery management systems and motor drive systems for electric vehicles, capable of handling high currents and providing efficient power control, helping to optimize the battery charging and discharging process.
3. **High Power Switches**: Due to its extremely low on-resistance, the H7N0312LM-VB is suitable for a variety of high-power switching applications, such as high-power power switches and load switches, ensuring stability and efficiency under high-load conditions.
4. **Industrial Equipment**: In industrial equipment, such as motor drives and power control systems, the H7N0312LM-VB can provide efficient power switching functions for applications that require high current and high efficiency.
5. **Computer Power Systems**: This MOSFET can be used in computer and server power systems to provide efficient power management, support high current loads and improve the overall performance of the system.
The high current carrying capacity and low on-resistance of the H7N0312LM-VB make it play an important role in power management, electric vehicles, motor drives and industrial control, and can significantly improve the efficiency and reliability of the system.
The high current handling capability and low on-resistance of the H7N0312LM-VB enable it to excel in the following areas and modules:
1. **Power Management and Converters**: In high-efficiency power management and DC-DC converters, the low on-resistance and high current capability of the H7N0312LM-VB ensure efficient power conversion and management, and is suitable for use in high-power power modules and power adapters.
2. **Electric Vehicle (EV) Systems**: This MOSFET can be used in battery management systems and motor drive systems for electric vehicles, capable of handling high currents and providing efficient power control, helping to optimize the battery charging and discharging process.
3. **High Power Switches**: Due to its extremely low on-resistance, the H7N0312LM-VB is suitable for a variety of high-power switching applications, such as high-power power switches and load switches, ensuring stability and efficiency under high-load conditions.
4. **Industrial Equipment**: In industrial equipment, such as motor drives and power control systems, the H7N0312LM-VB can provide efficient power switching functions for applications that require high current and high efficiency.
5. **Computer Power Systems**: This MOSFET can be used in computer and server power systems to provide efficient power management, support high current loads and improve the overall performance of the system.
The high current carrying capacity and low on-resistance of the H7N0312LM-VB make it play an important role in power management, electric vehicles, motor drives and industrial control, and can significantly improve the efficiency and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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