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H7N0311LSTL-E-VB Product details
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H7N0311LSTL-E-VB MOSFET Product Introduction
H7N0311LSTL-E-VB is a high-performance N-channel MOSFET in TO263 package, designed for low voltage and high current applications. It has a drain-source voltage (VDS) of up to 30V and a strong current carrying capacity (ID up to 70A), and uses Trench technology to achieve low on-resistance and high switching speed. This MOSFET is suitable for use in circuits requiring high performance and high reliability, such as power management, motor drive and load switching.
H7N0311LSTL-E-VB is a high-performance N-channel MOSFET in TO263 package, designed for low voltage and high current applications. It has a drain-source voltage (VDS) of up to 30V and a strong current carrying capacity (ID up to 70A), and uses Trench technology to achieve low on-resistance and high switching speed. This MOSFET is suitable for use in circuits requiring high performance and high reliability, such as power management, motor drive and load switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package:** TO263
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 30V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.7V
- **On-resistance (RDS(ON)):**
- 8mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Continuous drain current (ID):** 70A
- **Technology:** Trench
The low on-resistance and high current carrying capability of H7N0311LSTL-E-VB enable it to perform well in low-voltage and high-current applications, providing stable switching performance and efficient current transmission.
- **Package:** TO263
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 30V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.7V
- **On-resistance (RDS(ON)):**
- 8mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Continuous drain current (ID):** 70A
- **Technology:** Trench
The low on-resistance and high current carrying capability of H7N0311LSTL-E-VB enable it to perform well in low-voltage and high-current applications, providing stable switching performance and efficient current transmission.
Domain and module applications：
Application fields and module examples
1. **Power management system:**
In the power management system, H7N0311LSTL-E-VB can be used as a switching element to control the switching operation of the power supply. Its low on-resistance ensures efficient energy transfer and reduces power loss, improving the efficiency of the overall system.
2. **Load switch:**
This MOSFET is suitable for switching control of high current loads, such as in DC load switches and power switch modules. Its high current carrying capacity and low on-resistance enable it to stably control large current loads and provide fast and reliable switching functions.
3. **DC motor drive:**
In DC motor drive applications, H7N0311LSTL-E-VB can effectively drive high current motors. Its low on-resistance and high current carrying capacity enable it to provide stable current during motor startup and operation, ensuring efficient operation of the motor.
4. **DC-DC Converter:**
In DC-DC converters, H7N0311LSTL-E-VB can be used as a switching element. Its low on-resistance helps improve conversion efficiency and can handle higher currents to ensure stable power output.
5. **Power Protection Circuit:**
In power protection circuits, such as overcurrent protection and overvoltage protection, the high current capability and low on-resistance of H7N0311LSTL-E-VB can effectively control the current flow in the circuit and protect other components from damage.
The high current carrying capacity and low resistance characteristics of H7N0311LSTL-E-VB make it excellent in applications that require efficient and reliable switching operations, providing a reliable solution for power management and high-power applications.
1. **Power management system:**
In the power management system, H7N0311LSTL-E-VB can be used as a switching element to control the switching operation of the power supply. Its low on-resistance ensures efficient energy transfer and reduces power loss, improving the efficiency of the overall system.
2. **Load switch:**
This MOSFET is suitable for switching control of high current loads, such as in DC load switches and power switch modules. Its high current carrying capacity and low on-resistance enable it to stably control large current loads and provide fast and reliable switching functions.
3. **DC motor drive:**
In DC motor drive applications, H7N0311LSTL-E-VB can effectively drive high current motors. Its low on-resistance and high current carrying capacity enable it to provide stable current during motor startup and operation, ensuring efficient operation of the motor.
4. **DC-DC Converter:**
In DC-DC converters, H7N0311LSTL-E-VB can be used as a switching element. Its low on-resistance helps improve conversion efficiency and can handle higher currents to ensure stable power output.
5. **Power Protection Circuit:**
In power protection circuits, such as overcurrent protection and overvoltage protection, the high current capability and low on-resistance of H7N0311LSTL-E-VB can effectively control the current flow in the circuit and protect other components from damage.
The high current carrying capacity and low resistance characteristics of H7N0311LSTL-E-VB make it excellent in applications that require efficient and reliable switching operations, providing a reliable solution for power management and high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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