H7N0311LM-VB Product details
Product introduction:
**H7N0311LM-VB** is a high-performance single N-channel MOSFET in TO263 package, designed to handle low voltage and high current applications. The maximum drain-source voltage (VDS) of this MOSFET is 30V, which is suitable for medium and low voltage switching and control circuits. Its maximum drain current (ID) is up to 70A, making it excel in high current applications. The threshold voltage (Vth) is 1.7V, ensuring reliable conduction at low gate-source voltage. The on-resistance (RDS(ON)) is 8mΩ at VGS of 4.5V and 6mΩ at VGS of 10V, providing very low conduction losses. The H7N0311LM-VB uses Trench technology to improve switching efficiency and thermal performance, suitable for high power density applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 8mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench
Domain and module applications:
**H7N0311LM-VB** MOSFET has a wide range of applications in the following fields and modules:
1. **Power management**: In high-efficiency power management systems, such as DC-DC converters and power conditioning modules, the low on-resistance and high current handling capability of the H7N0311LM-VB enable it to reduce energy loss during the conversion process, improve system efficiency, and is suitable for a variety of power conversion applications.
2. **Motor drive**: In motor drive circuits, such as power tools and industrial motor control systems, this MOSFET is capable of handling currents up to 70A, suitable for driving high-power motors. Its low on-resistance ensures low power consumption and high efficiency under high current conditions.
3. **High Power Switch**: In high power switching applications, such as power amplifiers and high power load switches, the H7N0311LM-VB provides low on-resistance and high current handling capability, enabling it to excel in high power switching operations, ensuring efficient switching performance and stability.
4. **Automotive Electronics**: In automotive electronic devices, such as power window controllers and battery management systems, this MOSFET is capable of withstanding high current and medium and low voltage applications, and is suitable for automotive electrical systems that require high reliability, providing stable switching performance and reliable current control.
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