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H7N0310LSTL-E-VB Product details
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H7N0310LSTL-E-VB MOSFET Product Introduction
H7N0310LSTL-E-VB is a single N-channel MOSFET in TO263 package using Trench technology. This MOSFET is designed for high-efficiency power management applications and can handle a drain-source voltage (VDS) of 30V and a maximum drain current (ID) of 50A. Its on-resistance is as low as 12mΩ at VGS=10V, which can significantly reduce power loss and improve system efficiency, and is suitable for applications with high current and low voltage operation.
H7N0310LSTL-E-VB is a single N-channel MOSFET in TO263 package using Trench technology. This MOSFET is designed for high-efficiency power management applications and can handle a drain-source voltage (VDS) of 30V and a maximum drain current (ID) of 50A. Its on-resistance is as low as 12mΩ at VGS=10V, which can significantly reduce power loss and improve system efficiency, and is suitable for applications with high current and low voltage operation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
H7N0310LSTL-E-VB MOSFET Detailed parameter description
- **Package**: TO263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS = 4.5V
- 12mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 50A
- **Technology type**: Trench technology
- **Package**: TO263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS = 4.5V
- 12mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 50A
- **Technology type**: Trench technology
Domain and module applications：
Application fields and modules of H7N0310LSTL-E-VB MOSFET
With its high current handling capability and low on-resistance, H7N0310LSTL-E-VB MOSFET is suitable for multiple fields and modules, including:
1. **Power management and switching**: Due to its low on-resistance and high current capability, H7N0310LSTL-E-VB is very suitable for use as a switching element in power management systems, such as efficient DC-DC converters and power distribution networks. In these applications, it can reduce power losses and improve the overall efficiency of the system.
2. **Load switching**: In applications where high current loads need to be controlled, this MOSFET is able to provide stable switching performance. For example, in motor control and high-power LED drive circuits, H7N0310LSTL-E-VB can reliably handle load switching operations, ensuring the stability and efficiency of the system.
3. **Electric Vehicles (EV) and Charging Equipment**: The H7N0310LSTL-E-VB is suitable for power management modules in electric vehicles and charging equipment. Its high current capability and low on-resistance can effectively handle the switching requirements in battery management systems, optimizing power transmission and charging efficiency.
4. **Industrial Power**: In industrial automation and power control applications, the H7N0310LSTL-E-VB is able to provide excellent performance in high current environments. Suitable for industrial power modules and motor drive systems, it can stabilize operation and improve system reliability.
5. **Computer and Communication Equipment**: In computer and communication equipment, the H7N0310LSTL-E-VB is suitable for high current power supply and switching applications. It can be used as a switching element in power management modules to ensure the stability and efficiency of power supply.
In summary, H7N0310LSTL-E-VB is a high current, low on-resistance MOSFET suitable for power management, load switching, electric vehicles, industrial power supplies, and computer and communication equipment. It provides efficient and reliable performance to meet the needs of high current and low voltage applications.
With its high current handling capability and low on-resistance, H7N0310LSTL-E-VB MOSFET is suitable for multiple fields and modules, including:
1. **Power management and switching**: Due to its low on-resistance and high current capability, H7N0310LSTL-E-VB is very suitable for use as a switching element in power management systems, such as efficient DC-DC converters and power distribution networks. In these applications, it can reduce power losses and improve the overall efficiency of the system.
2. **Load switching**: In applications where high current loads need to be controlled, this MOSFET is able to provide stable switching performance. For example, in motor control and high-power LED drive circuits, H7N0310LSTL-E-VB can reliably handle load switching operations, ensuring the stability and efficiency of the system.
3. **Electric Vehicles (EV) and Charging Equipment**: The H7N0310LSTL-E-VB is suitable for power management modules in electric vehicles and charging equipment. Its high current capability and low on-resistance can effectively handle the switching requirements in battery management systems, optimizing power transmission and charging efficiency.
4. **Industrial Power**: In industrial automation and power control applications, the H7N0310LSTL-E-VB is able to provide excellent performance in high current environments. Suitable for industrial power modules and motor drive systems, it can stabilize operation and improve system reliability.
5. **Computer and Communication Equipment**: In computer and communication equipment, the H7N0310LSTL-E-VB is suitable for high current power supply and switching applications. It can be used as a switching element in power management modules to ensure the stability and efficiency of power supply.
In summary, H7N0310LSTL-E-VB is a high current, low on-resistance MOSFET suitable for power management, load switching, electric vehicles, industrial power supplies, and computer and communication equipment. It provides efficient and reliable performance to meet the needs of high current and low voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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