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H7N0307LM-VB Product details

Product introduction:

1. Product Introduction

The H7N0307LM-VB is a high-efficiency single N-channel MOSFET in a TO263 package, suitable for power management applications that require high current handling and low on-resistance. The device has a drain-source voltage (VDS) of 30V, a gate-source voltage (VGS) of ±20V, and a gate-source threshold voltage (Vth) of 1.7V. The on-resistance (RDS(ON)) of the H7N0307LM-VB is extremely low, at 2.7mΩ at a VGS of 4.5V and 2.4mΩ at a VGS of 10V, supporting a maximum drain current (ID) of 98A. This MOSFET uses Trench technology to ensure reliable performance and low power consumption in high-current applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 30V 1.7V 98A 2.4mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 30V 1.7V 98A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 30V 1.7V 98A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
2. Detailed parameter description

- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS = 4.5V
- 2.4mΩ @ VGS = 10V
- **Drain current (ID)**: 98A
- **Technology**: Trench
- **Operating temperature range**: Generally -55°C to +175°C (For specific parameters, please check the product data sheet)
- **Gate charge (Qg)**: For specific parameters, please check the product data sheet

Domain and module applications:

3. Applicable fields and module application examples

The low on-resistance and high current handling capability of the H7N0307LM-VB make it widely applicable in multiple application scenarios, especially in areas requiring efficient power conversion and control. Here are several typical application examples:

1. **Power management module**: This MOSFET is suitable for power management modules such as DC-DC converters and synchronous rectifiers. Its low on-resistance can reduce energy loss and improve overall conversion efficiency.

2. **Automotive electronic system**: In automotive electronic systems, the H7N0307LM-VB can be used in electric power steering (EPS) systems, starters, inverters, and battery management systems to support high current requirements and improve system reliability.

3. **Motor drive and control**: The device performs well in industrial and consumer motor drive and control applications, such as power tools and fan controllers, and can efficiently drive motors and provide stable current.

4. **Load Switch**: H7N0307LM-VB can be used for high-efficiency load switching, especially in applications where high current switching is required and space is limited, such as power management of portable devices such as laptops and tablets.

5. **Switching Power Supply**: In switching power supply (SMPS) applications, H7N0307LM-VB acts as the main switch, providing fast switching performance and low power consumption, providing stable power output for the device.

These application areas show the wide use of H7N0307LM-VB in low voltage, high current applications, and its excellent performance indicators make it an ideal choice for efficient power conversion and management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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