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H5N5012P-VB Product details
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H5N5012P-VB MOSFET Product Introduction
**H5N5012P-VB** is a high voltage N-channel MOSFET in TO3P package, designed to handle high voltage and high power applications. This MOSFET adopts SJ_Multi-EPI technology, has a drain-source voltage tolerance of 600V and a maximum drain current of 20A, suitable for high voltage power management and control applications. Its low on-resistance (190mΩ) ensures high efficiency and low power consumption, making it excel in power conversion, industrial applications and high voltage switching.
**H5N5012P-VB** is a high voltage N-channel MOSFET in TO3P package, designed to handle high voltage and high power applications. This MOSFET adopts SJ_Multi-EPI technology, has a drain-source voltage tolerance of 600V and a maximum drain current of 20A, suitable for high voltage power management and control applications. Its low on-resistance (190mΩ) ensures high efficiency and low power consumption, making it excel in power conversion, industrial applications and high voltage switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | 190mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
H5N5012P-VB MOSFET Detailed parameter description
- **Package**: TO3P
- **Configuration**: Single-N-Channel
- **Drain to source voltage (VDS)**: 600V
- **Gate to source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI technology
- **Package**: TO3P
- **Configuration**: Single-N-Channel
- **Drain to source voltage (VDS)**: 600V
- **Gate to source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI technology
Domain and module applications：
Application fields and module examples
1. **High-voltage power converter**: The 600V high voltage withstand capability of the H5N5012P-VB makes it suitable for high-voltage power converters and inverters. In these applications, MOSFETs need to handle high voltages stably and maintain high efficiency. Its low on-resistance helps reduce power consumption and improve power conversion efficiency, and is suitable for photovoltaic power generation systems and high-voltage DC-DC converters.
2. **Industrial motor control**: In industrial motor control systems, the H5N5012P-VB can be used for high-voltage motor drives to provide stable high-power output. The high current capability and high voltage withstand characteristics of the MOSFET make it suitable for heavy-duty motor drives, and are widely used in industrial automation, conveyor systems, and power tools.
3. **Power switches and control modules**: The H5N5012P-VB can be used for high-voltage load switches and control modules. In situations where high voltage and high power need to be handled, the high withstand voltage and low on-resistance of MOSFET ensure safe and reliable switching performance, and are suitable for protection switches and high-voltage switchgear in power systems.
4. **Uninterruptible Power Supply (UPS) System**: In UPS systems, H5N5012P-VB can be used as a key switching element to manage the conversion and distribution of high-voltage power. Its high voltage tolerance and stable performance ensure that UPS provides reliable backup power during power outages, and is widely used in data centers, communication facilities, and critical infrastructure.
These application scenarios demonstrate the wide applicability of H5N5012P-VB MOSFET in high voltage and high power environments, especially in power management and control systems that require efficient and stable performance.
1. **High-voltage power converter**: The 600V high voltage withstand capability of the H5N5012P-VB makes it suitable for high-voltage power converters and inverters. In these applications, MOSFETs need to handle high voltages stably and maintain high efficiency. Its low on-resistance helps reduce power consumption and improve power conversion efficiency, and is suitable for photovoltaic power generation systems and high-voltage DC-DC converters.
2. **Industrial motor control**: In industrial motor control systems, the H5N5012P-VB can be used for high-voltage motor drives to provide stable high-power output. The high current capability and high voltage withstand characteristics of the MOSFET make it suitable for heavy-duty motor drives, and are widely used in industrial automation, conveyor systems, and power tools.
3. **Power switches and control modules**: The H5N5012P-VB can be used for high-voltage load switches and control modules. In situations where high voltage and high power need to be handled, the high withstand voltage and low on-resistance of MOSFET ensure safe and reliable switching performance, and are suitable for protection switches and high-voltage switchgear in power systems.
4. **Uninterruptible Power Supply (UPS) System**: In UPS systems, H5N5012P-VB can be used as a key switching element to manage the conversion and distribution of high-voltage power. Its high voltage tolerance and stable performance ensure that UPS provides reliable backup power during power outages, and is widely used in data centers, communication facilities, and critical infrastructure.
These application scenarios demonstrate the wide applicability of H5N5012P-VB MOSFET in high voltage and high power environments, especially in power management and control systems that require efficient and stable performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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