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H5N5006DSTL-E-VB Product details
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H5N5006DSTL-E-VB MOSFET Product Introduction
H5N5006DSTL-E-VB is a high voltage N-channel MOSFET in TO251 package, designed for high voltage applications. This MOSFET has a drain-source voltage capability of 650V and adopts SJ_Multi-EPI technology to provide stable performance and reliable switching characteristics. H5N5006DSTL-E-VB is designed to handle high voltage and medium current applications, and is suitable for occasions requiring high voltage and high reliability.
H5N5006DSTL-E-VB is a high voltage N-channel MOSFET in TO251 package, designed for high voltage applications. This MOSFET has a drain-source voltage capability of 650V and adopts SJ_Multi-EPI technology to provide stable performance and reliable switching characteristics. H5N5006DSTL-E-VB is designed to handle high voltage and medium current applications, and is suitable for occasions requiring high voltage and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Package:** TO251
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 650V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 950mΩ @ VGS = 10V
- **Continuous drain current (ID):** 5A
- **Technology:** SJ_Multi-EPI
H5N5006DSTL-E-VB provides a high drain-source voltage capability of 650V, and has moderate on-resistance and high current carrying capacity, suitable for various applications in high voltage environments.
- **Package:** TO251
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 650V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 950mΩ @ VGS = 10V
- **Continuous drain current (ID):** 5A
- **Technology:** SJ_Multi-EPI
H5N5006DSTL-E-VB provides a high drain-source voltage capability of 650V, and has moderate on-resistance and high current carrying capacity, suitable for various applications in high voltage environments.
Domain and module applications：
Applications and module examples
1. **High voltage switch:**
H5N5006DSTL-E-VB is very suitable for high voltage switching applications, such as in high voltage power switch modules. It can handle voltages up to 650V and can provide stable switching performance under such high voltage conditions to ensure reliable operation of the power system.
2. **Power converter:**
In power converters, such as AC-DC converters and DC-DC converters, H5N5006DSTL-E-VB can be used as a key switching element. Its high voltage handling capability and moderate on-resistance can effectively manage the power conversion process, improve conversion efficiency, and ensure stable power output.
3. **Inverter:**
In the inverter circuit, the high voltage withstand capability of H5N5006DSTL-E-VB makes it suitable for photovoltaic inverters and other high voltage inverter applications. It can handle high voltage input, ensure the stability and efficiency of power conversion, and provide reliable performance in high voltage inverter systems.
4. **Motor drive:**
H5N5006DSTL-E-VB is also suitable for motor drive applications, especially in situations where high voltage control is required. It can stably control the start and operation of the motor in a high voltage environment, and is suitable for use in high voltage motor drive systems to ensure efficient operation of the system.
5. **Power protection:**
In power protection circuits, such as overvoltage protection and high voltage isolation circuits, H5N5006DSTL-E-VB can effectively protect other circuit components from high voltage damage. Its high withstand voltage characteristics can ensure the overall safety and stability of the system and prevent voltage spikes from damaging the system.
The high voltage and reliability characteristics of H5N5006DSTL-E-VB make it perform well in high voltage applications, providing designers with a MOSFET that can work stably under harsh conditions.
1. **High voltage switch:**
H5N5006DSTL-E-VB is very suitable for high voltage switching applications, such as in high voltage power switch modules. It can handle voltages up to 650V and can provide stable switching performance under such high voltage conditions to ensure reliable operation of the power system.
2. **Power converter:**
In power converters, such as AC-DC converters and DC-DC converters, H5N5006DSTL-E-VB can be used as a key switching element. Its high voltage handling capability and moderate on-resistance can effectively manage the power conversion process, improve conversion efficiency, and ensure stable power output.
3. **Inverter:**
In the inverter circuit, the high voltage withstand capability of H5N5006DSTL-E-VB makes it suitable for photovoltaic inverters and other high voltage inverter applications. It can handle high voltage input, ensure the stability and efficiency of power conversion, and provide reliable performance in high voltage inverter systems.
4. **Motor drive:**
H5N5006DSTL-E-VB is also suitable for motor drive applications, especially in situations where high voltage control is required. It can stably control the start and operation of the motor in a high voltage environment, and is suitable for use in high voltage motor drive systems to ensure efficient operation of the system.
5. **Power protection:**
In power protection circuits, such as overvoltage protection and high voltage isolation circuits, H5N5006DSTL-E-VB can effectively protect other circuit components from high voltage damage. Its high withstand voltage characteristics can ensure the overall safety and stability of the system and prevent voltage spikes from damaging the system.
The high voltage and reliability characteristics of H5N5006DSTL-E-VB make it perform well in high voltage applications, providing designers with a MOSFET that can work stably under harsh conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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