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H5N5006DL-VB Product details
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1. Product Introduction
**H5N5006DL-VB** is a single N-channel MOSFET in TO251 package, designed for high voltage and medium current applications. The maximum drain-source voltage (VDS) of this MOSFET is 650V, enabling it to handle high voltage loads. Its maximum drain current (ID) is 5A, suitable for applications with medium current loads. The threshold voltage (Vth) is 3.5V, ensuring normal conduction under appropriate gate-source voltage. The on-resistance (RDS(ON)) is 950mΩ at VGS of 10V, which is relatively high, but it can withstand high voltages and provide stable current control. The H5N5006DL-VB uses SJ_Multi-EPI technology, designed to improve reliability and performance under high voltage conditions.
**H5N5006DL-VB** is a single N-channel MOSFET in TO251 package, designed for high voltage and medium current applications. The maximum drain-source voltage (VDS) of this MOSFET is 650V, enabling it to handle high voltage loads. Its maximum drain current (ID) is 5A, suitable for applications with medium current loads. The threshold voltage (Vth) is 3.5V, ensuring normal conduction under appropriate gate-source voltage. The on-resistance (RDS(ON)) is 950mΩ at VGS of 10V, which is relatively high, but it can withstand high voltages and provide stable current control. The H5N5006DL-VB uses SJ_Multi-EPI technology, designed to improve reliability and performance under high voltage conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 950mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 950mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
3. Application fields and module examples
**H5N5006DL-VB** MOSFET has a wide range of applications in the following fields and modules:
1. **High-voltage power converter**: In high-voltage power converters, such as high-voltage DC-DC converters and high-voltage power adapters, this MOSFET can handle voltages up to 650V and is suitable for power modules that require high voltage tolerance. Although the on-resistance is high, its stability and high voltage handling capability can still meet system requirements.
2. **Power amplifier**: In high-voltage power amplifiers, such as audio amplifiers and RF amplifiers, H5N5006DL-VB is able to handle high voltages and provide stable switching performance, suitable for amplifier applications requiring high voltage and medium current.
3. **Motor drive**: In high-voltage motor control systems, such as drive systems for industrial motors and high-voltage power tools, this MOSFET provides reliable switching performance at high voltages, suitable for motor control applications requiring high voltage and medium current.
4. **High voltage protection circuit**: Used in high voltage protection circuits such as overvoltage protection and overcurrent protection, this MOSFET can effectively manage 650V high voltage, ensure system safety, prevent overload and damage, and improve the overall reliability of the system.
**H5N5006DL-VB** MOSFET has a wide range of applications in the following fields and modules:
1. **High-voltage power converter**: In high-voltage power converters, such as high-voltage DC-DC converters and high-voltage power adapters, this MOSFET can handle voltages up to 650V and is suitable for power modules that require high voltage tolerance. Although the on-resistance is high, its stability and high voltage handling capability can still meet system requirements.
2. **Power amplifier**: In high-voltage power amplifiers, such as audio amplifiers and RF amplifiers, H5N5006DL-VB is able to handle high voltages and provide stable switching performance, suitable for amplifier applications requiring high voltage and medium current.
3. **Motor drive**: In high-voltage motor control systems, such as drive systems for industrial motors and high-voltage power tools, this MOSFET provides reliable switching performance at high voltages, suitable for motor control applications requiring high voltage and medium current.
4. **High voltage protection circuit**: Used in high voltage protection circuits such as overvoltage protection and overcurrent protection, this MOSFET can effectively manage 650V high voltage, ensure system safety, prevent overload and damage, and improve the overall reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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