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H5N3007FN-VB Product details

Product introduction:

1. H5N3007FN-VB MOSFET Product Introduction

The H5N3007FN-VB is a high voltage N-channel MOSFET packaged in TO-220F. The device uses advanced SJ_Multi-EPI technology and is designed to handle high voltage and high current applications. Its maximum drain-source voltage (VDS) is 500V, which can cope with switching requirements in high voltage environments. The on-resistance (RDS(ON)) of the H5N3007FN-VB is 140mΩ, performs well at a gate-source voltage of 10V, and supports a drain current (ID) of up to 30A. The high voltage capability and stability of this MOSFET make it very suitable for power electronics and high-power applications, providing reliable and efficient switching performance.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 500V 3.5V 30A 140mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 500V 3.5V 30A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 500V 3.5V 30A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
2. H5N3007FN-VB MOSFET Detailed parameter description

- **Package**: TO-220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 140mΩ @ VGS = 10V
- **Drain current (ID)**: 30A
- **Technology**: SJ_Multi-EPI technology

Domain and module applications:

3. H5N3007FN-VB MOSFET applicable fields and module application examples

1. **High-voltage power converter**:
The 500V drain-source voltage of H5N3007FN-VB makes it very suitable for high-voltage power converters, such as high-power AC-DC converters and DC-DC converters. In these applications, it can effectively handle switching operations in high-voltage environments and provide high-efficiency power conversion through low on-resistance, reducing system energy loss.

2. **Industrial motor drive**:
In industrial motor drive systems, H5N3007FN-VB can withstand high voltage and high current requirements for motor starting, speed regulation and load control. Its high current capability and low on-resistance can improve the reliability and efficiency of motor control and is suitable for various industrial motor control scenarios.

3. **Power inverter**:
This MOSFET is suitable for high voltage and high power switching requirements in power inverters, such as inverters in photovoltaic power generation systems. Its high voltage tolerance and excellent switching performance enable it to stably convert DC to AC in inverters, improving the overall efficiency and stability of the system.

4. **Battery Management System**:
H5N3007FN-VB applications in battery management systems include protection and control of high-voltage battery packs. Its high voltage capability enables it to effectively handle the high voltage environment during battery charging and discharging, protecting the battery from overvoltage and overcurrent damage, while its low on-resistance can improve the overall efficiency of the battery management system.

5. **High-voltage Switch Control**:
In high-voltage switch control applications, such as power switchgear and high-voltage relay drives, the H5N3007FN-VB can provide reliable switch control and protection. Its high voltage and high current capabilities enable it to work stably in high-voltage environments, ensuring the safety and efficiency of switch control systems.

These application examples demonstrate the wide applicability of H5N3007FN-VB in environments with high voltage, high power and high reliability requirements. Its excellent performance makes it an ideal choice for various high-demand applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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