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H5N3007CF-VB Product details
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H5N3007CF-VB MOSFET Product Introduction
**H5N3007CF-VB** is a high voltage N-channel MOSFET in TO220F package, especially suitable for high voltage and high power applications. This MOSFET adopts SJ_Multi-EPI technology, with a drain-source voltage withstand capability of 500V and a maximum drain current of 30A, which can provide stable performance in harsh power management environments. Its relatively low on-resistance (140mΩ) ensures high efficiency and low power consumption, suitable for applications such as power conversion, industrial control and high voltage switching.
**H5N3007CF-VB** is a high voltage N-channel MOSFET in TO220F package, especially suitable for high voltage and high power applications. This MOSFET adopts SJ_Multi-EPI technology, with a drain-source voltage withstand capability of 500V and a maximum drain current of 30A, which can provide stable performance in harsh power management environments. Its relatively low on-resistance (140mΩ) ensures high efficiency and low power consumption, suitable for applications such as power conversion, industrial control and high voltage switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 500V | 3.5V | 30A | 140mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 500V | 3.5V | 30A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 500V | 3.5V | 30A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
H5N3007CF-VB MOSFET Detailed parameter description
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Drain to source voltage (VDS)**: 500V
- **Gate to source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 140mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 30A
- **Technology**: SJ_Multi-EPI technology
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Drain to source voltage (VDS)**: 500V
- **Gate to source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 140mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 30A
- **Technology**: SJ_Multi-EPI technology
Domain and module applications：
Application fields and module examples
1. **High-voltage power converter**: The 500V high voltage withstand capability of the H5N3007CF-VB makes it ideal for high-voltage power converters and inverters. These applications need to handle high voltages and maintain high efficiency, and the low on-resistance of the MOSFET helps reduce power consumption and improve the efficiency and stability of the overall system. It is suitable for photovoltaic power generation systems, grid-connected inverters, and high-voltage power modules.
2. **Industrial motor drive**: In industrial motor drive systems, the H5N3007CF-VB can be used for high-voltage motor control, providing reliable high-voltage switching capabilities. Its high current handling capability and high voltage resistance make it suitable for driving high-power motors, and it is widely used in motor control in industrial automation, conveyor systems, and heavy equipment.
3. **Power switching and control**: The H5N3007CF-VB can be used for high-power load switching and power control applications, especially in scenarios where high-voltage switching is required. MOSFET's high withstand voltage and stable switching performance enable it to safely control high-power loads, such as protection switches and high-voltage switch modules in power systems.
4. **Uninterruptible Power Supply (UPS) System**: In UPS systems, H5N3007CF-VB is used as a switching element for high-voltage power management. Its high voltage and high current capabilities ensure reliable backup power during power outages, keeping the system running continuously, and are suitable for data centers, telecommunications infrastructure, and protection of critical equipment.
These application scenarios demonstrate the wide applicability of H5N3007CF-VB MOSFET in high-voltage and high-power environments, especially in power management and control systems that require high efficiency and stability.
1. **High-voltage power converter**: The 500V high voltage withstand capability of the H5N3007CF-VB makes it ideal for high-voltage power converters and inverters. These applications need to handle high voltages and maintain high efficiency, and the low on-resistance of the MOSFET helps reduce power consumption and improve the efficiency and stability of the overall system. It is suitable for photovoltaic power generation systems, grid-connected inverters, and high-voltage power modules.
2. **Industrial motor drive**: In industrial motor drive systems, the H5N3007CF-VB can be used for high-voltage motor control, providing reliable high-voltage switching capabilities. Its high current handling capability and high voltage resistance make it suitable for driving high-power motors, and it is widely used in motor control in industrial automation, conveyor systems, and heavy equipment.
3. **Power switching and control**: The H5N3007CF-VB can be used for high-power load switching and power control applications, especially in scenarios where high-voltage switching is required. MOSFET's high withstand voltage and stable switching performance enable it to safely control high-power loads, such as protection switches and high-voltage switch modules in power systems.
4. **Uninterruptible Power Supply (UPS) System**: In UPS systems, H5N3007CF-VB is used as a switching element for high-voltage power management. Its high voltage and high current capabilities ensure reliable backup power during power outages, keeping the system running continuously, and are suitable for data centers, telecommunications infrastructure, and protection of critical equipment.
These application scenarios demonstrate the wide applicability of H5N3007CF-VB MOSFET in high-voltage and high-power environments, especially in power management and control systems that require high efficiency and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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