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H5N3004P-VB Product details
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H5N3004P-VB MOSFET Product Introduction
The H5N3004P-VB is a single N-channel MOSFET in a TO3P package, designed for high voltage and high current applications. The MOSFET can withstand drain-source voltages up to 600V and has low on-resistance (60mΩ @ VGS=10V) and high current handling capability (47A). It uses SJ_Multi-EPI technology to optimize the conduction performance and switching characteristics, making it excel in high power and high voltage applications.
The H5N3004P-VB is a single N-channel MOSFET in a TO3P package, designed for high voltage and high current applications. The MOSFET can withstand drain-source voltages up to 600V and has low on-resistance (60mΩ @ VGS=10V) and high current handling capability (47A). It uses SJ_Multi-EPI technology to optimize the conduction performance and switching characteristics, making it excel in high power and high voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | 60mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
H5N3004P-VB MOSFET Detailed parameter description
- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 60mΩ @ VGS = 10V
- **Drain current (ID)**: 47A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 60mΩ @ VGS = 10V
- **Drain current (ID)**: 47A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
H5N3004P-VB MOSFET Applications and Modules
The high voltage and high current characteristics of the H5N3004P-VB make it suitable for a variety of applications that require high power and high voltage processing:
1. **High Voltage Power Management**: In high voltage power converters and power management systems, the 600V drain-source voltage and 47A drain current capability of the H5N3004P-VB enable it to efficiently handle high voltage and high current power conversion, and is suitable for high voltage switching power supplies and high power power modules.
2. **Industrial Motor Drive**: This MOSFET is suitable for industrial motor drive systems, especially under high voltage and high current conditions, providing stable current control and efficient power transmission, which can meet the needs of industrial motor drive and control.
3. **Power Inverter**: In power inverters, the H5N3004P-VB can withstand voltages up to 600V and has low on-resistance, making it suitable for switch control and power management in high-voltage power inverters and converters.
4. **Electric Vehicle Systems**: In the power electronics systems of electric vehicles, such as motor drives and charging systems, this MOSFET provides high voltage and high current handling capabilities to ensure high efficiency and reliability in electric vehicle systems.
5. **Energy Conversion and Distribution**: The H5N3004P-VB can be used in various energy conversion and distribution systems, providing efficient power switching and control, suitable for high-power power distribution and management applications.
The high voltage and high current characteristics of the H5N3004P-VB enable it to perform well in areas such as high-power power management, industrial control, power inverters, and electric vehicle systems, ensuring high efficiency and reliability of the system.
The high voltage and high current characteristics of the H5N3004P-VB make it suitable for a variety of applications that require high power and high voltage processing:
1. **High Voltage Power Management**: In high voltage power converters and power management systems, the 600V drain-source voltage and 47A drain current capability of the H5N3004P-VB enable it to efficiently handle high voltage and high current power conversion, and is suitable for high voltage switching power supplies and high power power modules.
2. **Industrial Motor Drive**: This MOSFET is suitable for industrial motor drive systems, especially under high voltage and high current conditions, providing stable current control and efficient power transmission, which can meet the needs of industrial motor drive and control.
3. **Power Inverter**: In power inverters, the H5N3004P-VB can withstand voltages up to 600V and has low on-resistance, making it suitable for switch control and power management in high-voltage power inverters and converters.
4. **Electric Vehicle Systems**: In the power electronics systems of electric vehicles, such as motor drives and charging systems, this MOSFET provides high voltage and high current handling capabilities to ensure high efficiency and reliability in electric vehicle systems.
5. **Energy Conversion and Distribution**: The H5N3004P-VB can be used in various energy conversion and distribution systems, providing efficient power switching and control, suitable for high-power power distribution and management applications.
The high voltage and high current characteristics of the H5N3004P-VB enable it to perform well in areas such as high-power power management, industrial control, power inverters, and electric vehicle systems, ensuring high efficiency and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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