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H5N2521FN-VB Product details
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H5N2521FN-VB MOSFET Product Introduction
H5N2521FN-VB is a single N-channel MOSFET using Trench technology and packaged in TO220F. This MOSFET is designed for high voltage applications, with a drain-source voltage (VDS) of up to 250V and a maximum drain current (ID) of 4.4A. Its on-resistance is 1100mΩ at VGS=10V, which is suitable for applications with medium power and voltage requirements, providing stable switching performance and efficient power management.
H5N2521FN-VB is a single N-channel MOSFET using Trench technology and packaged in TO220F. This MOSFET is designed for high voltage applications, with a drain-source voltage (VDS) of up to 250V and a maximum drain current (ID) of 4.4A. Its on-resistance is 1100mΩ at VGS=10V, which is suitable for applications with medium power and voltage requirements, providing stable switching performance and efficient power management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 250V | 3V | 4.4A | 1100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 250V | 3V | 4.4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 250V | 3V | 4.4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
H5N2521FN-VB MOSFET Detailed parameter description
- **Package**: TO220F
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 4.4A
- **Technology type**: Trench technology
- **Package**: TO220F
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 4.4A
- **Technology type**: Trench technology
Domain and module applications：
Application fields and modules of H5N2521FN-VB MOSFET
H5N2521FN-VB MOSFET has high withstand voltage and medium current capability, suitable for various high voltage and medium power application scenarios. Here are some typical application fields and modules:
1. **High voltage power converter**: H5N2521FN-VB can be used as a switching element in a high voltage power converter. Its high drain-source voltage capability of 250V enables it to handle the switching operation of high voltage power supplies, suitable for high voltage power modules and inverters, and provide reliable performance for power conversion.
2. **Medium power switch**: In medium power power switching applications such as motor drive, power regulation and transformer control, H5N2521FN-VB's 4.4A drain current capability and moderate on-resistance enable it to handle the power requirements in these applications, suitable for various power switch control systems.
3. **Industrial Power Management**: H5N2521FN-VB is also suitable for industrial power management systems, capable of handling high voltage and medium current power requirements of 250V. This makes it perform well in industrial power distribution and power conditioning modules, providing stable and efficient power management.
4. **Power Tools and Equipment**: In high voltage and medium power power tools and equipment, H5N2521FN-VB can be used as a switching element, such as motor control and power conditioning applications. Its reliable switching performance and moderate power handling capabilities ensure stable operation of the equipment.
In general, H5N2521FN-VB is a MOSFET suitable for high voltage and medium power applications, and is widely used in power conversion, power switching, industrial power management and power tools.
H5N2521FN-VB MOSFET has high withstand voltage and medium current capability, suitable for various high voltage and medium power application scenarios. Here are some typical application fields and modules:
1. **High voltage power converter**: H5N2521FN-VB can be used as a switching element in a high voltage power converter. Its high drain-source voltage capability of 250V enables it to handle the switching operation of high voltage power supplies, suitable for high voltage power modules and inverters, and provide reliable performance for power conversion.
2. **Medium power switch**: In medium power power switching applications such as motor drive, power regulation and transformer control, H5N2521FN-VB's 4.4A drain current capability and moderate on-resistance enable it to handle the power requirements in these applications, suitable for various power switch control systems.
3. **Industrial Power Management**: H5N2521FN-VB is also suitable for industrial power management systems, capable of handling high voltage and medium current power requirements of 250V. This makes it perform well in industrial power distribution and power conditioning modules, providing stable and efficient power management.
4. **Power Tools and Equipment**: In high voltage and medium power power tools and equipment, H5N2521FN-VB can be used as a switching element, such as motor control and power conditioning applications. Its reliable switching performance and moderate power handling capabilities ensure stable operation of the equipment.
In general, H5N2521FN-VB is a MOSFET suitable for high voltage and medium power applications, and is widely used in power conversion, power switching, industrial power management and power tools.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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