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H5N2519P-VB Product details
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H5N2519P-VB MOSFET Product Introduction
**H5N2519P-VB** is a high-performance N-Channel MOSFET in TO3P package, designed for high power and high voltage applications. Using advanced Trench technology, this MOSFET provides excellent current handling capability and low on-resistance. The maximum drain-source voltage is 250V, the gate-source voltage range is ±20V, and the threshold voltage is 3.5V. Its on-resistance is 40mΩ @ VGS=10V and can withstand drain currents up to 60A. The H5N2519P-VB is an ideal choice for high power applications that require high efficiency and reliability.
**H5N2519P-VB** is a high-performance N-Channel MOSFET in TO3P package, designed for high power and high voltage applications. Using advanced Trench technology, this MOSFET provides excellent current handling capability and low on-resistance. The maximum drain-source voltage is 250V, the gate-source voltage range is ±20V, and the threshold voltage is 3.5V. Its on-resistance is 40mΩ @ VGS=10V and can withstand drain currents up to 60A. The H5N2519P-VB is an ideal choice for high power applications that require high efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 250V | 3.5V | 60A | 40mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 250V | 3.5V | 60A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 250V | 3.5V | 60A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Package type**: TO3P
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 250V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 40mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 60A
- **Technology**: Trench
- **Package type**: TO3P
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 250V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 40mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 60A
- **Technology**: Trench
Domain and module applications：
Applications and Modules
1. **Industrial Power Systems**:
The high voltage and high current handling capabilities of the H5N2519P-VB make it an excellent performer in industrial power systems. It is suitable for high-power DC-DC converters, UPS (Uninterruptible Power Supply) systems, and other industrial applications that require stable power conversion and efficient power management.
2. **Motor Drive Control**:
The high current capability and low on-resistance of this MOSFET are ideal for motor drive control. It can play a role in industrial motors, power tools, and other drive circuits that require high power and high reliability, ensuring stable operation and efficient control of the motor.
3. **Power Amplifier**:
The H5N2519P-VB can be used in power amplifier circuits, especially in applications that need to handle high currents and high voltages. It is suitable for audio amplifiers, RF amplifiers, and other high-power amplification applications, providing low-loss and high-efficiency power amplification solutions.
4. **High Power Load Switch**:
Due to its high power handling capability and low conduction loss, the H5N2519P-VB is very suitable for high power load switching circuits such as lighting control, heating equipment control, and other industrial applications that require high power switching. It can provide reliable switching performance and long service life in high power load environments.
1. **Industrial Power Systems**:
The high voltage and high current handling capabilities of the H5N2519P-VB make it an excellent performer in industrial power systems. It is suitable for high-power DC-DC converters, UPS (Uninterruptible Power Supply) systems, and other industrial applications that require stable power conversion and efficient power management.
2. **Motor Drive Control**:
The high current capability and low on-resistance of this MOSFET are ideal for motor drive control. It can play a role in industrial motors, power tools, and other drive circuits that require high power and high reliability, ensuring stable operation and efficient control of the motor.
3. **Power Amplifier**:
The H5N2519P-VB can be used in power amplifier circuits, especially in applications that need to handle high currents and high voltages. It is suitable for audio amplifiers, RF amplifiers, and other high-power amplification applications, providing low-loss and high-efficiency power amplification solutions.
4. **High Power Load Switch**:
Due to its high power handling capability and low conduction loss, the H5N2519P-VB is very suitable for high power load switching circuits such as lighting control, heating equipment control, and other industrial applications that require high power switching. It can provide reliable switching performance and long service life in high power load environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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