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H5N2517FN-VB Product details
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H5N2517FN-VB MOSFET Product Introduction
The H5N2517FN-VB is a high-performance single N-channel MOSFET in a TO220F package. Designed for high voltage and high current applications, the device features a drain-source voltage (V_DS) of 250V and a maximum drain current of 40A, making it suitable for use in high voltage and high power environments. The MOSFET uses Trench technology to achieve low on-resistance, enabling it to provide higher efficiency and reliability in high current switching operations.
The H5N2517FN-VB is a high-performance single N-channel MOSFET in a TO220F package. Designed for high voltage and high current applications, the device features a drain-source voltage (V_DS) of 250V and a maximum drain current of 40A, making it suitable for use in high voltage and high power environments. The MOSFET uses Trench technology to achieve low on-resistance, enabling it to provide higher efficiency and reliability in high current switching operations.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 250V | 3.5V | 40A | 40mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 250V | 3.5V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 250V | 3.5V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: H5N2517FN-VB
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage(V_DS)**: 250V
- **Gate-Source Voltage(V_GS)**: ±20V
- **Threshold Voltage(V_th)**: 3.5V
- **On-Resistance(R_DS(ON))**:
- 40mΩ @ V_GS = 10V
- **Maximum Drain Current(I_D)**: 40A
- **Technology**: Trench
- **Model**: H5N2517FN-VB
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage(V_DS)**: 250V
- **Gate-Source Voltage(V_GS)**: ±20V
- **Threshold Voltage(V_th)**: 3.5V
- **On-Resistance(R_DS(ON))**:
- 40mΩ @ V_GS = 10V
- **Maximum Drain Current(I_D)**: 40A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
The high voltage and high current handling capabilities of the H5N2517FN-VB MOSFET enable it to excel in multiple fields and modules:
1. **High-power power converters**: The H5N2517FN-VB is suitable for high-power power converters such as switch mode power supplies (SMPS) and DC-DC converters. Its low on-resistance minimizes losses during power conversion, thereby improving system efficiency, especially for devices that require high current output.
2. **Electric vehicle control systems**: In the power management and control modules of electric vehicles, this MOSFET can be used as the main switching device for motor drive, battery management and other occasions. Its high current and high voltage withstand capabilities ensure stable performance under harsh conditions, enhancing the reliability and safety of electric vehicles.
3. **Industrial automation equipment**: The H5N2517FN-VB can be applied to high-power load control in industrial automation, such as motor drives and high-power relay control. Its Trench technology provides low on-resistance, ensuring excellent thermal management and long life for devices operating at high currents.
4. **Inverters and Power Amplifiers**: In inverters and high-power power amplifiers, this MOSFET is used for conversion and amplification of high-voltage, high-power signals. It is capable of handling high-power currents and is suitable for applications that require precise control of electrical energy.
These features make the H5N2517FN-VB an ideal choice for high-voltage, high-current applications, especially in situations where high performance and reliability are required.
The high voltage and high current handling capabilities of the H5N2517FN-VB MOSFET enable it to excel in multiple fields and modules:
1. **High-power power converters**: The H5N2517FN-VB is suitable for high-power power converters such as switch mode power supplies (SMPS) and DC-DC converters. Its low on-resistance minimizes losses during power conversion, thereby improving system efficiency, especially for devices that require high current output.
2. **Electric vehicle control systems**: In the power management and control modules of electric vehicles, this MOSFET can be used as the main switching device for motor drive, battery management and other occasions. Its high current and high voltage withstand capabilities ensure stable performance under harsh conditions, enhancing the reliability and safety of electric vehicles.
3. **Industrial automation equipment**: The H5N2517FN-VB can be applied to high-power load control in industrial automation, such as motor drives and high-power relay control. Its Trench technology provides low on-resistance, ensuring excellent thermal management and long life for devices operating at high currents.
4. **Inverters and Power Amplifiers**: In inverters and high-power power amplifiers, this MOSFET is used for conversion and amplification of high-voltage, high-power signals. It is capable of handling high-power currents and is suitable for applications that require precise control of electrical energy.
These features make the H5N2517FN-VB an ideal choice for high-voltage, high-current applications, especially in situations where high performance and reliability are required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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