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H5N2512FL-M0-VB Product details
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H5N2512FL-M0-VB MOSFET Product Introduction
The H5N2512FL-M0-VB is a single N-channel MOSFET in a TO220F package, designed for high voltage and high current applications. The device can withstand drain-source voltages up to 250V while providing an on-resistance as low as 40mΩ and can support drain currents up to 40A at a 10V gate drive. This MOSFET uses advanced trench technology and has excellent switching performance and efficiency, making it ideal for scenarios that require efficient power transmission and control.
The H5N2512FL-M0-VB is a single N-channel MOSFET in a TO220F package, designed for high voltage and high current applications. The device can withstand drain-source voltages up to 250V while providing an on-resistance as low as 40mΩ and can support drain currents up to 40A at a 10V gate drive. This MOSFET uses advanced trench technology and has excellent switching performance and efficiency, making it ideal for scenarios that require efficient power transmission and control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 250V | 3.5V | 40A | 40mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 250V | 3.5V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 250V | 3.5V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
H5N2512FL-M0-VB MOSFET Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 40mΩ @ VGS = 10V
- **Drain current (ID)**: 40A
- **Technology**: Trench
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 40mΩ @ VGS = 10V
- **Drain current (ID)**: 40A
- **Technology**: Trench
Domain and module applications：
H5N2512FL-M0-VB MOSFET Applications and Modules
The high voltage and high current capabilities of the H5N2512FL-M0-VB MOSFET make it suitable for a variety of demanding application scenarios:
1. **Power Management System**: In power management systems that require high voltage and high current handling capabilities, such as switching power supplies and power converters, the H5N2512FL-M0-VB can effectively perform high-efficiency power transmission and regulation, and is an ideal choice for efficient power management.
2. **Motor Drive**: This MOSFET can be used in industrial and consumer motor drive systems. With its high current carrying capacity (40A) and low on-resistance (40mΩ), it can achieve stable current control and efficient power output, and is suitable for power tools and motor control modules.
3. **Inverters and converters**: In inverters and power converters, the H5N2512FL-M0-VB provides efficient power conversion and management through its high voltage withstand capability (250V) and low on-resistance, making it suitable for use in high-efficiency energy conversion modules.
4. **Electric Vehicle Electronics**: In the power electronics system of electric vehicles, this MOSFET can be used in on-board power modules, chargers, and motor controllers to provide efficient power switching and control functions to ensure the reliability and performance of electric vehicle systems.
The design of the H5N2512FL-M0-VB makes it an ideal choice for handling high voltage, high current applications, especially in the fields of power management, industrial control, and electric vehicles where reliability and efficient performance are required.
The high voltage and high current capabilities of the H5N2512FL-M0-VB MOSFET make it suitable for a variety of demanding application scenarios:
1. **Power Management System**: In power management systems that require high voltage and high current handling capabilities, such as switching power supplies and power converters, the H5N2512FL-M0-VB can effectively perform high-efficiency power transmission and regulation, and is an ideal choice for efficient power management.
2. **Motor Drive**: This MOSFET can be used in industrial and consumer motor drive systems. With its high current carrying capacity (40A) and low on-resistance (40mΩ), it can achieve stable current control and efficient power output, and is suitable for power tools and motor control modules.
3. **Inverters and converters**: In inverters and power converters, the H5N2512FL-M0-VB provides efficient power conversion and management through its high voltage withstand capability (250V) and low on-resistance, making it suitable for use in high-efficiency energy conversion modules.
4. **Electric Vehicle Electronics**: In the power electronics system of electric vehicles, this MOSFET can be used in on-board power modules, chargers, and motor controllers to provide efficient power switching and control functions to ensure the reliability and performance of electric vehicle systems.
The design of the H5N2512FL-M0-VB makes it an ideal choice for handling high voltage, high current applications, especially in the fields of power management, industrial control, and electric vehicles where reliability and efficient performance are required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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