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H5N2510DSTL-E-VB Product details
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H5N2510DSTL-E-VB MOSFET Product Introduction
The H5N2510DSTL-E-VB is a high voltage N-channel MOSFET in a TO252 package with a drain-source voltage capability of 250V. Designed for high voltage applications, this MOSFET uses Trench technology to provide low on-resistance and excellent switching performance. The H5N2510DSTL-E-VB is designed to meet the needs of high efficiency and reliability, making it very suitable for a variety of applications requiring high voltage and high current.
The H5N2510DSTL-E-VB is a high voltage N-channel MOSFET in a TO252 package with a drain-source voltage capability of 250V. Designed for high voltage applications, this MOSFET uses Trench technology to provide low on-resistance and excellent switching performance. The H5N2510DSTL-E-VB is designed to meet the needs of high efficiency and reliability, making it very suitable for a variety of applications requiring high voltage and high current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3.5V | 17A | 176mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3.5V | 17A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3.5V | 17A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package:** TO252
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 250V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 176mΩ @ VGS = 10V
- **Continuous drain current (ID):** 17A
- **Technology:** Trench
H5N2510DSTL-E-VB has a high drain-source voltage and moderate on-resistance, can work stably in a high voltage environment, and is suitable for various application scenarios requiring high voltage and large current.
- **Package:** TO252
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 250V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 176mΩ @ VGS = 10V
- **Continuous drain current (ID):** 17A
- **Technology:** Trench
H5N2510DSTL-E-VB has a high drain-source voltage and moderate on-resistance, can work stably in a high voltage environment, and is suitable for various application scenarios requiring high voltage and large current.
Domain and module applications：
Applications and module examples
1. **High voltage switch:**
H5N2510DSTL-E-VB is very suitable for high voltage switching applications. This MOSFET can handle voltages up to 250V and can provide stable and reliable switching operations under such high voltage conditions, suitable for switch modules in power management and power conversion systems.
2. **Power converter:**
In power converters, such as AC-DC converters and DC-DC converters, H5N2510DSTL-E-VB can be used as a key switching element. Its high voltage tolerance and low on-resistance enable it to effectively manage the power conversion process and ensure efficient and stable output power.
3. **Motor drive:**
H5N2510DSTL-E-VB is suitable for motor drive applications, especially in situations where high voltage control is required. It can reliably control the start-up and operation of the motor to ensure safe and stable operation in a high voltage environment.
4. **Inverter:**
H5N2510DSTL-E-VB is suitable for switching elements in inverter circuits. Its high withstand voltage of 250V can handle higher voltage inputs and is suitable for photovoltaic inverters and other high-voltage inverter applications, providing reliable protection for power conversion.
5. **Power protection:**
H5N2510DSTL-E-VB is also suitable for power protection circuits, such as overvoltage protection and high-voltage isolation circuits. Its high withstand voltage characteristics enable it to protect other circuit components from voltage spikes and overvoltage damage, ensuring the safety and reliability of the entire system.
The application of H5N2510DSTL-E-VB in these fields can help designers achieve efficient power management and voltage control, and improve the performance and reliability of electronic equipment.
1. **High voltage switch:**
H5N2510DSTL-E-VB is very suitable for high voltage switching applications. This MOSFET can handle voltages up to 250V and can provide stable and reliable switching operations under such high voltage conditions, suitable for switch modules in power management and power conversion systems.
2. **Power converter:**
In power converters, such as AC-DC converters and DC-DC converters, H5N2510DSTL-E-VB can be used as a key switching element. Its high voltage tolerance and low on-resistance enable it to effectively manage the power conversion process and ensure efficient and stable output power.
3. **Motor drive:**
H5N2510DSTL-E-VB is suitable for motor drive applications, especially in situations where high voltage control is required. It can reliably control the start-up and operation of the motor to ensure safe and stable operation in a high voltage environment.
4. **Inverter:**
H5N2510DSTL-E-VB is suitable for switching elements in inverter circuits. Its high withstand voltage of 250V can handle higher voltage inputs and is suitable for photovoltaic inverters and other high-voltage inverter applications, providing reliable protection for power conversion.
5. **Power protection:**
H5N2510DSTL-E-VB is also suitable for power protection circuits, such as overvoltage protection and high-voltage isolation circuits. Its high withstand voltage characteristics enable it to protect other circuit components from voltage spikes and overvoltage damage, ensuring the safety and reliability of the entire system.
The application of H5N2510DSTL-E-VB in these fields can help designers achieve efficient power management and voltage control, and improve the performance and reliability of electronic equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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