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H5N2508DS-VB Product details
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H5N2508DS-VB MOSFET Product Introduction
The H5N2508DS-VB is a high voltage single N-channel MOSFET in a TO252 package. Designed for high voltage and high current applications, this MOSFET features a drain-source voltage (V_DS) of 250V and a maximum drain current of 17A. It utilizes Trench technology to achieve low on-resistance, making it suitable for switching operations in high power and high voltage environments, ensuring efficient switching performance and reliable current handling capabilities.
The H5N2508DS-VB is a high voltage single N-channel MOSFET in a TO252 package. Designed for high voltage and high current applications, this MOSFET features a drain-source voltage (V_DS) of 250V and a maximum drain current of 17A. It utilizes Trench technology to achieve low on-resistance, making it suitable for switching operations in high power and high voltage environments, ensuring efficient switching performance and reliable current handling capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3.5V | 17A | 176mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3.5V | 17A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3.5V | 17A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: H5N2508DS-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage(V_DS)**: 250V
- **Gate-Source Voltage(V_GS)**: ±20V
- **Threshold Voltage(V_th)**: 3.5V
- **On-Resistance(R_DS(ON))**:
- 176mΩ @ V_GS = 10V
- **Maximum Drain Current(I_D)**: 17A
- **Technology**: Trench
- **Model**: H5N2508DS-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage(V_DS)**: 250V
- **Gate-Source Voltage(V_GS)**: ±20V
- **Threshold Voltage(V_th)**: 3.5V
- **On-Resistance(R_DS(ON))**:
- 176mΩ @ V_GS = 10V
- **Maximum Drain Current(I_D)**: 17A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
The high voltage and high current capabilities of the H5N2508DS-VB MOSFET make it suitable for the following application areas:
1. **High Voltage Power Converters**: In high voltage power converters, the H5N2508DS-VB can be used as the main switching element for converting and regulating high voltage power. Its high drain-source voltage (V_DS) and low on-resistance ensure high efficiency and stable power management, reducing power consumption and improving the overall efficiency of the system.
2. **Electric Vehicle Charging System**: In the charging system of electric vehicles, the H5N2508DS-VB can be used for charging management and power protection. Its high voltage and high current resistance make it suitable for handling the high voltage requirements of the charging process, while providing reliable switching control to ensure the safety and efficiency of the charging system.
3. **Industrial Power and Load Switches**: In industrial applications such as power distribution and load switching, the H5N2508DS-VB can be used in high voltage and high current environments. Its low on-resistance helps improve switching efficiency, reduce heat generation, and ensure stable operation of the load.
4. **Power Amplifier**: In power amplifier and high power applications, the H5N2508DS-VB can be used as a high voltage and high current control switch. Its high withstand voltage capability ensures safety under high power operation, while its low on-resistance optimizes the efficiency of power amplification.
These features make the H5N2508DS-VB an ideal choice for handling high voltage and high current applications, especially where efficient switching and stable performance are required.
The high voltage and high current capabilities of the H5N2508DS-VB MOSFET make it suitable for the following application areas:
1. **High Voltage Power Converters**: In high voltage power converters, the H5N2508DS-VB can be used as the main switching element for converting and regulating high voltage power. Its high drain-source voltage (V_DS) and low on-resistance ensure high efficiency and stable power management, reducing power consumption and improving the overall efficiency of the system.
2. **Electric Vehicle Charging System**: In the charging system of electric vehicles, the H5N2508DS-VB can be used for charging management and power protection. Its high voltage and high current resistance make it suitable for handling the high voltage requirements of the charging process, while providing reliable switching control to ensure the safety and efficiency of the charging system.
3. **Industrial Power and Load Switches**: In industrial applications such as power distribution and load switching, the H5N2508DS-VB can be used in high voltage and high current environments. Its low on-resistance helps improve switching efficiency, reduce heat generation, and ensure stable operation of the load.
4. **Power Amplifier**: In power amplifier and high power applications, the H5N2508DS-VB can be used as a high voltage and high current control switch. Its high withstand voltage capability ensures safety under high power operation, while its low on-resistance optimizes the efficiency of power amplification.
These features make the H5N2508DS-VB an ideal choice for handling high voltage and high current applications, especially where efficient switching and stable performance are required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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