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H5N2504DSTL-E-VB Product details
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1. H5N2504DSTL-E-VB Product Introduction
H5N2504DSTL-E-VB is a single-N-Channel MOSFET in TO252 package, designed for high voltage and high current applications. It uses advanced trench technology and has a drain-source voltage (VDS) capability of up to 250V, suitable for application scenarios that require high voltage processing. The gate-source voltage (VGS) of H5N2504DSTL-E-VB is ±20V, and the threshold voltage (Vth) is 3.5V, which can maintain stable performance at higher voltages. Its on-resistance (RDS(ON)) is 176mΩ, which performs well at VGS of 10V. This MOSFET is suitable for high voltage switching and power conversion applications, providing reliable current handling capabilities and efficient switching performance.
H5N2504DSTL-E-VB is a single-N-Channel MOSFET in TO252 package, designed for high voltage and high current applications. It uses advanced trench technology and has a drain-source voltage (VDS) capability of up to 250V, suitable for application scenarios that require high voltage processing. The gate-source voltage (VGS) of H5N2504DSTL-E-VB is ±20V, and the threshold voltage (Vth) is 3.5V, which can maintain stable performance at higher voltages. Its on-resistance (RDS(ON)) is 176mΩ, which performs well at VGS of 10V. This MOSFET is suitable for high voltage switching and power conversion applications, providing reliable current handling capabilities and efficient switching performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3.5V | 17A | 176mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3.5V | 17A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3.5V | 17A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. H5N2504DSTL-E-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 176mΩ @ VGS=10V
- **Maximum drain current (ID)**: 17A
- **Technology**: Trench technology
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 176mΩ @ VGS=10V
- **Maximum drain current (ID)**: 17A
- **Technology**: Trench technology
Domain and module applications：
3. Applications and Module Examples
The high voltage and high current handling capabilities of the H5N2504DSTL-E-VB MOSFET make it suitable for multiple high voltage and power-intensive applications.
1. **High Voltage Power Converter**:
The H5N2504DSTL-E-VB can be used in high voltage DC-DC converters as the main switching element to handle voltages up to 250V. Its high voltage capability and low on-resistance enable it to provide efficient power conversion and stable performance in high voltage conversion applications.
2. **Power Factor Correction (PFC) Circuit**:
In power factor correction circuits, this MOSFET can be used for switching applications of high voltage PFC modules. The high voltage handling capability and low on-resistance of the H5N2504DSTL-E-VB help improve the power factor of the power system and optimize the overall efficiency of the power supply.
3. **Industrial Power Supply Systems**:
In industrial power supply systems, the H5N2504DSTL-E-VB can be used as a high voltage switching element for high voltage control and management of power supplies. Its stability and reliability in high voltage environments make it ideal for power control in various industrial applications.
4. **High Voltage Switching Applications**:
The H5N2504DSTL-E-VB excels in switching applications that need to handle high voltages, such as high voltage relay drives or high voltage load switches. Its high voltage and high current handling capabilities ensure stability and performance in these high voltage switching applications.
Through these application scenarios, the H5N2504DSTL-E-VB MOSFET provides superior performance in high voltage, high power applications, and is suitable for switching and power management in various high voltage environments.
The high voltage and high current handling capabilities of the H5N2504DSTL-E-VB MOSFET make it suitable for multiple high voltage and power-intensive applications.
1. **High Voltage Power Converter**:
The H5N2504DSTL-E-VB can be used in high voltage DC-DC converters as the main switching element to handle voltages up to 250V. Its high voltage capability and low on-resistance enable it to provide efficient power conversion and stable performance in high voltage conversion applications.
2. **Power Factor Correction (PFC) Circuit**:
In power factor correction circuits, this MOSFET can be used for switching applications of high voltage PFC modules. The high voltage handling capability and low on-resistance of the H5N2504DSTL-E-VB help improve the power factor of the power system and optimize the overall efficiency of the power supply.
3. **Industrial Power Supply Systems**:
In industrial power supply systems, the H5N2504DSTL-E-VB can be used as a high voltage switching element for high voltage control and management of power supplies. Its stability and reliability in high voltage environments make it ideal for power control in various industrial applications.
4. **High Voltage Switching Applications**:
The H5N2504DSTL-E-VB excels in switching applications that need to handle high voltages, such as high voltage relay drives or high voltage load switches. Its high voltage and high current handling capabilities ensure stability and performance in these high voltage switching applications.
Through these application scenarios, the H5N2504DSTL-E-VB MOSFET provides superior performance in high voltage, high power applications, and is suitable for switching and power management in various high voltage environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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