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H5N2503P-VB Product details
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1. Product Introduction
**H5N2503P-VB** is a single N-channel MOSFET packaged in TO3P, designed for high voltage and high current applications. The maximum drain-source voltage (VDS) of this MOSFET is 250V, which is suitable for handling high voltage loads. Its maximum drain current (ID) is 60A, which is suitable for high current applications. The threshold voltage (Vth) is 3.5V, ensuring normal operation under appropriate gate-source voltage. The on-resistance (RDS(ON)) is 40mΩ at VGS of 10V, providing reasonable conduction loss and able to maintain stable performance under high current conditions. H5N2503P-VB adopts Trench technology to ensure reliability and high performance under high voltage.
**H5N2503P-VB** is a single N-channel MOSFET packaged in TO3P, designed for high voltage and high current applications. The maximum drain-source voltage (VDS) of this MOSFET is 250V, which is suitable for handling high voltage loads. Its maximum drain current (ID) is 60A, which is suitable for high current applications. The threshold voltage (Vth) is 3.5V, ensuring normal operation under appropriate gate-source voltage. The on-resistance (RDS(ON)) is 40mΩ at VGS of 10V, providing reasonable conduction loss and able to maintain stable performance under high current conditions. H5N2503P-VB adopts Trench technology to ensure reliability and high performance under high voltage.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 250V | 3.5V | 60A | 40mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 250V | 3.5V | 60A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 250V | 3.5V | 60A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
2. Detailed parameter description
- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 40mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 60A
- **Technology**: Trench
- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 40mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 60A
- **Technology**: Trench
Domain and module applications：
3. Application fields and module examples
**H5N2503P-VB** MOSFET performs well in the following fields and modules:
1. **High-voltage power management**: In high-voltage power management systems, such as high-voltage power adapters and industrial power modules, the H5N2503P-VB can handle voltages up to 250V and provide currents up to 60A, suitable for use as power switches and regulators to ensure efficient and stable operation of the system.
2. **Motor drive**: In high-voltage motor drive applications, such as industrial motor drive systems and power tools, the H5N2503P-VB provides high current handling capabilities and stable switching control, suitable for motor control scenarios that require high voltage and high current.
3. **Power converter**: In power converters and high-power switch modules, the high voltage tolerance and reasonable on-resistance of this MOSFET ensure efficient power conversion and system stability, such as high-power LED drivers and high-power amplifiers.
4. **High voltage protection circuit**: Used in high voltage protection circuits such as overvoltage protection and current protection, H5N2503P-VB can effectively manage the current under high voltage conditions, prevent system overload and damage, and improve the safety and reliability of the system.
**H5N2503P-VB** MOSFET performs well in the following fields and modules:
1. **High-voltage power management**: In high-voltage power management systems, such as high-voltage power adapters and industrial power modules, the H5N2503P-VB can handle voltages up to 250V and provide currents up to 60A, suitable for use as power switches and regulators to ensure efficient and stable operation of the system.
2. **Motor drive**: In high-voltage motor drive applications, such as industrial motor drive systems and power tools, the H5N2503P-VB provides high current handling capabilities and stable switching control, suitable for motor control scenarios that require high voltage and high current.
3. **Power converter**: In power converters and high-power switch modules, the high voltage tolerance and reasonable on-resistance of this MOSFET ensure efficient power conversion and system stability, such as high-power LED drivers and high-power amplifiers.
4. **High voltage protection circuit**: Used in high voltage protection circuits such as overvoltage protection and current protection, H5N2503P-VB can effectively manage the current under high voltage conditions, prevent system overload and damage, and improve the safety and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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