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H5N2501LSTL-E-VB Product details
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H5N2501LSTL-E-VB MOSFET Product Introduction
**H5N2501LSTL-E-VB** is a high voltage, high current N-Channel MOSFET in TO263 package. It uses Trench technology and is designed for applications that require high voltage and high current handling. The maximum drain-source voltage of this MOSFET is 250V, the gate-source voltage range is ±20V, and the threshold voltage is 3.5V. The on-resistance is 230mΩ @ VGS=10V, and it can withstand a maximum drain current of 16A. The H5N2501LSTL-E-VB provides reliable high voltage switching capability and low conduction loss, suitable for a variety of high power application scenarios.
**H5N2501LSTL-E-VB** is a high voltage, high current N-Channel MOSFET in TO263 package. It uses Trench technology and is designed for applications that require high voltage and high current handling. The maximum drain-source voltage of this MOSFET is 250V, the gate-source voltage range is ±20V, and the threshold voltage is 3.5V. The on-resistance is 230mΩ @ VGS=10V, and it can withstand a maximum drain current of 16A. The H5N2501LSTL-E-VB provides reliable high voltage switching capability and low conduction loss, suitable for a variety of high power application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 250V | 3.5V | 16A | 230mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 250V | 3.5V | 16A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 250V | 3.5V | 16A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 250V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 230mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 16A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 250V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 230mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 16A
- **Technology**: Trench
Domain and module applications：
Applications and modules
1. **High voltage power management**:
The high voltage tolerance of H5N2501LSTL-E-VB makes it very effective in high voltage power management systems. It can handle drain-source voltages up to 250V and is suitable for high voltage DC-DC converters, power distribution and power protection circuits to ensure system stability and reliability.
2. **Power switch**:
The high current handling capability and low on-resistance of this MOSFET make it suitable for high power switching applications. It can be used in circuits that need to switch high voltage and high current loads, such as switching power supplies and power regulators for industrial equipment, ensuring efficient power control and stable performance.
3. **Motor drive**:
In motor drive applications, H5N2501LSTL-E-VB provides reliable switching performance and is capable of handling high voltage and high current loads. It is suitable for motor control systems, especially in situations where high power loads need to be handled, such as start-stop control and speed regulation applications of high power motors.
4. **High Power Load Switch**:
This MOSFET is suitable for high power load switching circuits. In applications that require switching high power loads, such as high power lamps, heaters, and industrial power modules, the H5N2501LSTL-E-VB can provide reliable switching performance and long life to meet the needs of various high power applications.
1. **High voltage power management**:
The high voltage tolerance of H5N2501LSTL-E-VB makes it very effective in high voltage power management systems. It can handle drain-source voltages up to 250V and is suitable for high voltage DC-DC converters, power distribution and power protection circuits to ensure system stability and reliability.
2. **Power switch**:
The high current handling capability and low on-resistance of this MOSFET make it suitable for high power switching applications. It can be used in circuits that need to switch high voltage and high current loads, such as switching power supplies and power regulators for industrial equipment, ensuring efficient power control and stable performance.
3. **Motor drive**:
In motor drive applications, H5N2501LSTL-E-VB provides reliable switching performance and is capable of handling high voltage and high current loads. It is suitable for motor control systems, especially in situations where high power loads need to be handled, such as start-stop control and speed regulation applications of high power motors.
4. **High Power Load Switch**:
This MOSFET is suitable for high power load switching circuits. In applications that require switching high power loads, such as high power lamps, heaters, and industrial power modules, the H5N2501LSTL-E-VB can provide reliable switching performance and long life to meet the needs of various high power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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