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H5N2501LM-E-VB Product details
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H5N2501LM-E-VB MOSFET Product Introduction
H5N2501LM-E-VB is a high voltage single N-channel MOSFET in TO263 package. With a high drain-source voltage (V_DS) of 250V and a maximum drain current of 16A, this MOSFET is suitable for applications that handle high voltage and high current. Its Trench technology design ensures low on-resistance and excellent switching performance, enabling it to operate stably in high voltage environments and provide efficient current control.
H5N2501LM-E-VB is a high voltage single N-channel MOSFET in TO263 package. With a high drain-source voltage (V_DS) of 250V and a maximum drain current of 16A, this MOSFET is suitable for applications that handle high voltage and high current. Its Trench technology design ensures low on-resistance and excellent switching performance, enabling it to operate stably in high voltage environments and provide efficient current control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 250V | 3.5V | 16A | 230mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 250V | 3.5V | 16A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 250V | 3.5V | 16A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: H5N2501LM-E-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage(V_DS)**: 250V
- **Gate-Source Voltage(V_GS)**: ±20V
- **Threshold Voltage(V_th)**: 3.5V
- **On-Resistance(R_DS(ON))**:
- 230mΩ @ V_GS = 10V
- **Maximum Drain Current(I_D)**: 16A
- **Technology**: Trench
- **Model**: H5N2501LM-E-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage(V_DS)**: 250V
- **Gate-Source Voltage(V_GS)**: ±20V
- **Threshold Voltage(V_th)**: 3.5V
- **On-Resistance(R_DS(ON))**:
- 230mΩ @ V_GS = 10V
- **Maximum Drain Current(I_D)**: 16A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
The high voltage withstand capability and excellent current handling capability of the H5N2501LM-E-VB MOSFET make it outstanding in a variety of application areas:
1. **High Voltage Power Management**: The H5N2501LM-E-VB is suitable for high voltage power management and control systems, such as high voltage power converters and inverters. In these applications, it can stably switch high voltage loads while providing low conduction losses, improving the efficiency and stability of the power system.
2. **Power Supply System**: In power supply systems, such as power amplifiers and power protection circuits, the H5N2501LM-E-VB can be used to handle high voltage and high current loads. Its high voltage withstand capability and large current carrying capacity ensure the safety and reliability of the system.
3. **Industrial Control**: In industrial control equipment and automation systems, the H5N2501LM-E-VB can be used as a switching element for high voltage control and load switching. The low on-resistance of this MOSFET allows for better efficiency and thermal management when switching high voltage loads.
4. **Electric Vehicle Charging System**: In an electric vehicle charging station or charging module, the H5N2501LM-E-VB can be used for battery charging control and power management. Its high withstand voltage characteristics can handle the high voltage during charging, while providing stable current control to ensure safe and efficient charging.
These features make the H5N2501LM-E-VB a reliable choice for high voltage applications, especially in situations where high current and high voltage conditions need to be handled.
The high voltage withstand capability and excellent current handling capability of the H5N2501LM-E-VB MOSFET make it outstanding in a variety of application areas:
1. **High Voltage Power Management**: The H5N2501LM-E-VB is suitable for high voltage power management and control systems, such as high voltage power converters and inverters. In these applications, it can stably switch high voltage loads while providing low conduction losses, improving the efficiency and stability of the power system.
2. **Power Supply System**: In power supply systems, such as power amplifiers and power protection circuits, the H5N2501LM-E-VB can be used to handle high voltage and high current loads. Its high voltage withstand capability and large current carrying capacity ensure the safety and reliability of the system.
3. **Industrial Control**: In industrial control equipment and automation systems, the H5N2501LM-E-VB can be used as a switching element for high voltage control and load switching. The low on-resistance of this MOSFET allows for better efficiency and thermal management when switching high voltage loads.
4. **Electric Vehicle Charging System**: In an electric vehicle charging station or charging module, the H5N2501LM-E-VB can be used for battery charging control and power management. Its high withstand voltage characteristics can handle the high voltage during charging, while providing stable current control to ensure safe and efficient charging.
These features make the H5N2501LM-E-VB a reliable choice for high voltage applications, especially in situations where high current and high voltage conditions need to be handled.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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