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H5N2007FN-VB Product details
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H5N2007FN-VB MOSFET Product Introduction
**H5N2007FN-VB** is a high-performance N-channel MOSFET in TO220F package. This MOSFET adopts Trench technology and is designed for high voltage and high current applications. It can withstand drain-source voltages up to 200V. The H5N2007FN-VB has low on-resistance and high drain current capability, making it excellent in high-power and high-efficiency circuit designs, and is suitable for various power management and switching applications.
**H5N2007FN-VB** is a high-performance N-channel MOSFET in TO220F package. This MOSFET adopts Trench technology and is designed for high voltage and high current applications. It can withstand drain-source voltages up to 200V. The H5N2007FN-VB has low on-resistance and high drain current capability, making it excellent in high-power and high-efficiency circuit designs, and is suitable for various power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 45A | 38mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
H5N2007FN-VB MOSFET detailed parameter description
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Drain to Source Voltage (VDS)**: 200V
- **Gate to Source Voltage (VGS)**: ±20V
- **Gate Threshold Voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 38mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 45A
- **Technology**: Trench technology
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Drain to Source Voltage (VDS)**: 200V
- **Gate to Source Voltage (VGS)**: ±20V
- **Gate Threshold Voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 38mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 45A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
1. **Power converter**: The high voltage capability and low on-resistance of H5N2007FN-VB make it very suitable for power converters such as buck-boost converters and inverters. In these applications, MOSFET can stably handle high voltage and high current, improve conversion efficiency and reduce power loss, ensuring the stability and reliability of the power system.
2. **Motor drive**: In motor drive systems, H5N2007FN-VB can be used as a switching element for high-voltage motor drive. Its high current handling capability and low on-resistance can provide smooth motor control, suitable for industrial automation, motor control modules in home appliances, etc.
3. **High-power load switch**: Due to its high voltage and high current carrying capacity, H5N2007FN-VB is suitable for high-power load switching applications. In these applications, MOSFET can effectively control the switching state of high-power loads to ensure the safety and stability of the system in a high-voltage environment.
4. **Uninterruptible Power Supply (UPS) System**: In UPS systems, the H5N2007FN-VB can act as a key switching component to control the conversion and management of high-power power. Its high voltage withstand capability and high efficiency ensure that the UPS system provides reliable backup power in the event of power outages or failures.
These application areas demonstrate the wide applicability of the H5N2007FN-VB MOSFET in high-voltage and high-power environments, especially in power management and control systems that require high current handling and low on-resistance.
1. **Power converter**: The high voltage capability and low on-resistance of H5N2007FN-VB make it very suitable for power converters such as buck-boost converters and inverters. In these applications, MOSFET can stably handle high voltage and high current, improve conversion efficiency and reduce power loss, ensuring the stability and reliability of the power system.
2. **Motor drive**: In motor drive systems, H5N2007FN-VB can be used as a switching element for high-voltage motor drive. Its high current handling capability and low on-resistance can provide smooth motor control, suitable for industrial automation, motor control modules in home appliances, etc.
3. **High-power load switch**: Due to its high voltage and high current carrying capacity, H5N2007FN-VB is suitable for high-power load switching applications. In these applications, MOSFET can effectively control the switching state of high-power loads to ensure the safety and stability of the system in a high-voltage environment.
4. **Uninterruptible Power Supply (UPS) System**: In UPS systems, the H5N2007FN-VB can act as a key switching component to control the conversion and management of high-power power. Its high voltage withstand capability and high efficiency ensure that the UPS system provides reliable backup power in the event of power outages or failures.
These application areas demonstrate the wide applicability of the H5N2007FN-VB MOSFET in high-voltage and high-power environments, especially in power management and control systems that require high current handling and low on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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