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H5N2005DL-VB Product details
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H5N2005DL-VB MOSFET Product Introduction
The H5N2005DL-VB is a single N-channel MOSFET in a TO251 package, designed for medium-to-high voltage and medium-power applications. The MOSFET can withstand drain-source voltages up to 200V and is suitable for applications that require higher voltage and current handling capabilities. It uses advanced trench technology to provide lower on-resistance and reliable performance, and can provide efficient switch control and power management in multiple applications.
The H5N2005DL-VB is a single N-channel MOSFET in a TO251 package, designed for medium-to-high voltage and medium-power applications. The MOSFET can withstand drain-source voltages up to 200V and is suitable for applications that require higher voltage and current handling capabilities. It uses advanced trench technology to provide lower on-resistance and reliable performance, and can provide efficient switch control and power management in multiple applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 3V | 8A | 270mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 3V | 8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 3V | 8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
H5N2005DL-VB MOSFET Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 270mΩ @ VGS = 10V
- **Drain current (ID)**: 8A
- **Technology**: Trench
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 270mΩ @ VGS = 10V
- **Drain current (ID)**: 8A
- **Technology**: Trench
Domain and module applications：
H5N2005DL-VB MOSFET Applications and Modules
The high voltage and medium current characteristics of the H5N2005DL-VB MOSFET make it suitable for a variety of application scenarios:
1. **Power Switch**: In high voltage power management systems such as switching power supplies and inverters, the H5N2005DL-VB is able to handle voltages up to 200V, suitable for power switch control and power conversion, ensuring the stability and efficient operation of the system.
2. **Power Tools and Home Appliances**: Due to its high withstand voltage and medium current capability, this MOSFET can be used for power switches in power tools and home appliances, providing stable current control and reliable performance, suitable for a variety of applications requiring medium power and high voltage handling.
3. **Automotive Electronics**: In automotive electronics applications, the H5N2005DL-VB can be used for on-board power management and motor drive systems, providing efficient power switching and protection, suitable for on-board power conversion modules and high-voltage battery systems.
4. **Industrial Control**: In industrial control systems, such as motor drive and power regulation applications, this MOSFET can provide high voltage and medium current handling capabilities to control and manage high power loads, improving system reliability and performance.
These features make the H5N2005DL-VB an ideal choice for a variety of applications that require high voltage and medium current handling, especially in the fields of high voltage power supplies and industrial control.
The high voltage and medium current characteristics of the H5N2005DL-VB MOSFET make it suitable for a variety of application scenarios:
1. **Power Switch**: In high voltage power management systems such as switching power supplies and inverters, the H5N2005DL-VB is able to handle voltages up to 200V, suitable for power switch control and power conversion, ensuring the stability and efficient operation of the system.
2. **Power Tools and Home Appliances**: Due to its high withstand voltage and medium current capability, this MOSFET can be used for power switches in power tools and home appliances, providing stable current control and reliable performance, suitable for a variety of applications requiring medium power and high voltage handling.
3. **Automotive Electronics**: In automotive electronics applications, the H5N2005DL-VB can be used for on-board power management and motor drive systems, providing efficient power switching and protection, suitable for on-board power conversion modules and high-voltage battery systems.
4. **Industrial Control**: In industrial control systems, such as motor drive and power regulation applications, this MOSFET can provide high voltage and medium current handling capabilities to control and manage high power loads, improving system reliability and performance.
These features make the H5N2005DL-VB an ideal choice for a variety of applications that require high voltage and medium current handling, especially in the fields of high voltage power supplies and industrial control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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