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H5N2004DSTL-E-VB Product details
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1. H5N2004DSTL-E-VB Product Introduction
H5N2004DSTL-E-VB is a single-N-Channel MOSFET in TO252 package, designed for high voltage applications. It uses advanced trench technology and has a drain-source voltage (VDS) capability of up to 200V, suitable for applications that require high voltage tolerance. The gate-source voltage (VGS) of this MOSFET is ±20V, and the threshold voltage (Vth) is 3V, which can operate stably at higher voltages. Its on-resistance (RDS(ON)) is 245mΩ, and it performs well at a VGS of 10V. The H5N2004DSTL-E-VB is suitable for high-voltage switching and power conversion applications, providing reliable current handling capabilities and superior switching performance.
H5N2004DSTL-E-VB is a single-N-Channel MOSFET in TO252 package, designed for high voltage applications. It uses advanced trench technology and has a drain-source voltage (VDS) capability of up to 200V, suitable for applications that require high voltage tolerance. The gate-source voltage (VGS) of this MOSFET is ±20V, and the threshold voltage (Vth) is 3V, which can operate stably at higher voltages. Its on-resistance (RDS(ON)) is 245mΩ, and it performs well at a VGS of 10V. The H5N2004DSTL-E-VB is suitable for high-voltage switching and power conversion applications, providing reliable current handling capabilities and superior switching performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | 245mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. H5N2004DSTL-E-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 245mΩ @ VGS=10V
- **Maximum drain current (ID)**: 10A
- **Technology**: Trench technology
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 245mΩ @ VGS=10V
- **Maximum drain current (ID)**: 10A
- **Technology**: Trench technology
Domain and module applications：
3. Application fields and module examples
The high voltage and high current handling capabilities of the H5N2004DSTL-E-VB MOSFET make it suitable for multiple high voltage and power-intensive application scenarios.
1. **High voltage power converter**:
In high voltage DC-DC converters, the H5N2004DSTL-E-VB can be used as the main switching element to handle voltages up to 200V. Its high voltage tolerance makes it very suitable for power conversion in high voltage environments, ensuring the stability and efficiency of power conversion.
2. **Motor drive system**:
In high voltage motor drive systems, the H5N2004DSTL-E-VB is able to handle switching requirements under high voltage. Its high current carrying capacity and on-resistance enable it to provide stable switching performance and efficient power control in motor drive applications.
3. **Power Factor Correction (PFC) Circuit**:
In power factor correction circuits, H5N2004DSTL-E-VB can be used for switching applications of high voltage PFC modules. Its high voltage withstand capability and low on-resistance help improve the power factor of the power system and improve energy efficiency.
4. **Industrial Power Supply System**:
In various industrial power supply systems, H5N2004DSTL-E-VB can be used as a high voltage switching element to help achieve efficient power distribution and power management. Its stability and reliability in high voltage environments make it suitable for power control and switching in various industrial applications.
Through these application scenarios, H5N2004DSTL-E-VB MOSFET provides superior performance in high voltage, high power applications, and is an ideal choice for switching and power management in high voltage environments.
The high voltage and high current handling capabilities of the H5N2004DSTL-E-VB MOSFET make it suitable for multiple high voltage and power-intensive application scenarios.
1. **High voltage power converter**:
In high voltage DC-DC converters, the H5N2004DSTL-E-VB can be used as the main switching element to handle voltages up to 200V. Its high voltage tolerance makes it very suitable for power conversion in high voltage environments, ensuring the stability and efficiency of power conversion.
2. **Motor drive system**:
In high voltage motor drive systems, the H5N2004DSTL-E-VB is able to handle switching requirements under high voltage. Its high current carrying capacity and on-resistance enable it to provide stable switching performance and efficient power control in motor drive applications.
3. **Power Factor Correction (PFC) Circuit**:
In power factor correction circuits, H5N2004DSTL-E-VB can be used for switching applications of high voltage PFC modules. Its high voltage withstand capability and low on-resistance help improve the power factor of the power system and improve energy efficiency.
4. **Industrial Power Supply System**:
In various industrial power supply systems, H5N2004DSTL-E-VB can be used as a high voltage switching element to help achieve efficient power distribution and power management. Its stability and reliability in high voltage environments make it suitable for power control and switching in various industrial applications.
Through these application scenarios, H5N2004DSTL-E-VB MOSFET provides superior performance in high voltage, high power applications, and is an ideal choice for switching and power management in high voltage environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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