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H5N2003P-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
**H5N2003P-VB** is a single N-channel MOSFET in TO3P package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 200V, which can withstand higher voltage loads. The maximum drain current (ID) of this MOSFET is 96A, which is suitable for high current applications. The threshold voltage (Vth) is 4V, ensuring reliable operation at higher gate-source voltages. The on-resistance (RDS(ON)) is 13.8mΩ at VGS of 10V, providing low conduction losses and high efficiency. H5N2003P-VB uses Trench technology to ensure reliability and performance under high voltage and high current conditions.
**H5N2003P-VB** is a single N-channel MOSFET in TO3P package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 200V, which can withstand higher voltage loads. The maximum drain current (ID) of this MOSFET is 96A, which is suitable for high current applications. The threshold voltage (Vth) is 4V, ensuring reliable operation at higher gate-source voltages. The on-resistance (RDS(ON)) is 13.8mΩ at VGS of 10V, providing low conduction losses and high efficiency. H5N2003P-VB uses Trench technology to ensure reliability and performance under high voltage and high current conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 200V | 4V | 96A | 13.8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 200V | 4V | 96A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 200V | 4V | 96A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
2. Detailed parameter description
- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 4V
- **On-resistance (RDS(ON))**: 13.8mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 96A
- **Technology**: Trench
- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 4V
- **On-resistance (RDS(ON))**: 13.8mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 96A
- **Technology**: Trench
Domain and module applications：
3. Application fields and module examples
**H5N2003P-VB** MOSFET has a wide range of applications in the following fields and modules:
1. **High-voltage switching power supply**: In high-voltage switching power supply modules, such as high-voltage power adapters and power inverters, H5N2003P-VB can be used as the main switching element, handling a high voltage of 200V and providing a current of up to 96A, ensuring the stability and efficiency of the power supply.
2. **Motor drive**: Suitable for high-voltage motor drive systems, such as power control for industrial motors and power tools, this MOSFET is able to handle high voltage and high current, providing stable current control and reliable switching performance.
3. **Power management system**: In power management systems, such as high-power power distribution and battery management systems, H5N2003P-VB provides the advantages of high current and low on-resistance, helping to optimize the energy efficiency and reliability of the system.
4. **High Power Converters**: Used in high power converters such as power amplifiers and high power LED drivers, the high current handling capability and low on-resistance of this MOSFET ensure high efficiency and long life of the equipment.
**H5N2003P-VB** MOSFET has a wide range of applications in the following fields and modules:
1. **High-voltage switching power supply**: In high-voltage switching power supply modules, such as high-voltage power adapters and power inverters, H5N2003P-VB can be used as the main switching element, handling a high voltage of 200V and providing a current of up to 96A, ensuring the stability and efficiency of the power supply.
2. **Motor drive**: Suitable for high-voltage motor drive systems, such as power control for industrial motors and power tools, this MOSFET is able to handle high voltage and high current, providing stable current control and reliable switching performance.
3. **Power management system**: In power management systems, such as high-power power distribution and battery management systems, H5N2003P-VB provides the advantages of high current and low on-resistance, helping to optimize the energy efficiency and reliability of the system.
4. **High Power Converters**: Used in high power converters such as power amplifiers and high power LED drivers, the high current handling capability and low on-resistance of this MOSFET ensure high efficiency and long life of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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