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H5N2001LSTL-E-VB Product details
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H5N2001LSTL-E-VB MOSFET Product Introduction
H5N2001LSTL-E-VB is a single N-channel MOSFET using Trench technology, packaged in TO263. This MOSFET is designed for high voltage applications, with a drain-source voltage (VDS) of up to 200V and a maximum drain current (ID) of 40A. Its moderate on-resistance and high current handling capability make it perform well in high voltage and power-intensive applications, suitable for power management and power switching systems.
H5N2001LSTL-E-VB is a single N-channel MOSFET using Trench technology, packaged in TO263. This MOSFET is designed for high voltage applications, with a drain-source voltage (VDS) of up to 200V and a maximum drain current (ID) of 40A. Its moderate on-resistance and high current handling capability make it perform well in high voltage and power-intensive applications, suitable for power management and power switching systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | 48mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
H5N2001LSTL-E-VB MOSFET Detailed parameter description
- **Package**: TO263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 48mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 40A
- **Technology type**: Trench technology
- **Package**: TO263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 48mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 40A
- **Technology type**: Trench technology
Domain and module applications：
Application fields and modules of H5N2001LSTL-E-VB MOSFET
The high withstand voltage and high current capability of H5N2001LSTL-E-VB MOSFET make it excellent in a variety of high voltage and power-intensive applications. Here are some typical application fields and modules:
1. **High voltage power converter**: In high voltage power conversion systems, H5N2001LSTL-E-VB is suitable for use as a switching element to handle the switching operation of high voltage power due to its 200V drain-source voltage capability. This makes it very suitable for use in power management and inverter circuits to ensure stable and efficient power conversion.
2. **Power switch**: In power switching applications, such as motor drive and transformer control, H5N2001LSTL-E-VB can be used for switching control of high power loads. Its high current handling capability and relatively low on-resistance make it suitable for handling large current loads, ensuring the stability and efficiency of the system.
3. **Industrial Power**: In industrial power modules, such as power distribution and power conditioning systems, the H5N2001LSTL-E-VB can be used to control high voltage and high current circuits, supporting stable operation and efficient power management of industrial equipment.
4. **Power Tools and Equipment**: In power tools and equipment that require high voltage and high current, such as large motors and high power equipment, the high voltage withstand capability and high current handling capability of the H5N2001LSTL-E-VB can meet the needs of the equipment, ensuring reliable performance and long life.
In short, the H5N2001LSTL-E-VB is a high voltage withstand, high current handling MOSFET that is very suitable for use in high voltage, high power applications, including power conversion, power switching, industrial power supplies, and power tools.
The high withstand voltage and high current capability of H5N2001LSTL-E-VB MOSFET make it excellent in a variety of high voltage and power-intensive applications. Here are some typical application fields and modules:
1. **High voltage power converter**: In high voltage power conversion systems, H5N2001LSTL-E-VB is suitable for use as a switching element to handle the switching operation of high voltage power due to its 200V drain-source voltage capability. This makes it very suitable for use in power management and inverter circuits to ensure stable and efficient power conversion.
2. **Power switch**: In power switching applications, such as motor drive and transformer control, H5N2001LSTL-E-VB can be used for switching control of high power loads. Its high current handling capability and relatively low on-resistance make it suitable for handling large current loads, ensuring the stability and efficiency of the system.
3. **Industrial Power**: In industrial power modules, such as power distribution and power conditioning systems, the H5N2001LSTL-E-VB can be used to control high voltage and high current circuits, supporting stable operation and efficient power management of industrial equipment.
4. **Power Tools and Equipment**: In power tools and equipment that require high voltage and high current, such as large motors and high power equipment, the high voltage withstand capability and high current handling capability of the H5N2001LSTL-E-VB can meet the needs of the equipment, ensuring reliable performance and long life.
In short, the H5N2001LSTL-E-VB is a high voltage withstand, high current handling MOSFET that is very suitable for use in high voltage, high power applications, including power conversion, power switching, industrial power supplies, and power tools.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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