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H5N2001LM-VB Product details
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H5N2001LM-VB MOSFET Product Introduction
**H5N2001LM-VB** is a high voltage, high current N-Channel MOSFET in TO263 package. This MOSFET adopts Trench technology and is designed for high power and high voltage applications. Its maximum drain-source voltage is 200V, the gate-source voltage range is ±20V, and the threshold voltage is 3V. The on-resistance is 48mΩ @ VGS=10V, and it can withstand a maximum drain current of 40A. The H5N2001LM-VB provides excellent switching performance and low conduction loss, and is suitable for applications that need to handle high voltage and high current.
**H5N2001LM-VB** is a high voltage, high current N-Channel MOSFET in TO263 package. This MOSFET adopts Trench technology and is designed for high power and high voltage applications. Its maximum drain-source voltage is 200V, the gate-source voltage range is ±20V, and the threshold voltage is 3V. The on-resistance is 48mΩ @ VGS=10V, and it can withstand a maximum drain current of 40A. The H5N2001LM-VB provides excellent switching performance and low conduction loss, and is suitable for applications that need to handle high voltage and high current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | 48mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 48mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 40A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 48mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 40A
- **Technology**: Trench
Domain and module applications：
Applications and Modules
1. **High Voltage Power Management**:
The high withstand voltage characteristics of the H5N2001LM-VB make it very effective in high voltage power management applications. It can handle drain-source voltages up to 200V, suitable for high voltage DC-DC converters and power modules, ensuring system stability and reliability.
2. **Power Amplifier**:
In power amplifier design, the H5N2001LM-VB provides sufficient current handling capability and low on-resistance, suitable for applications requiring high power and high voltage. It can effectively switch and amplify signals in power amplifiers, improving the overall performance of the system.
3. **Motor Drive**:
The H5N2001LM-VB performs well in motor drive systems, especially in situations where high voltage and high current need to be handled. It can effectively drive motors and provide stable current control, suitable for industrial motor control and high power motor drive applications.
4. **High Power Switch**:
This MOSFET is suitable for high power switching circuits, especially when high current handling is required. Its high current capability and low on-resistance make it very reliable in power switching, current control and load switching applications, ensuring high efficiency and long life of high power switching circuits.
1. **High Voltage Power Management**:
The high withstand voltage characteristics of the H5N2001LM-VB make it very effective in high voltage power management applications. It can handle drain-source voltages up to 200V, suitable for high voltage DC-DC converters and power modules, ensuring system stability and reliability.
2. **Power Amplifier**:
In power amplifier design, the H5N2001LM-VB provides sufficient current handling capability and low on-resistance, suitable for applications requiring high power and high voltage. It can effectively switch and amplify signals in power amplifiers, improving the overall performance of the system.
3. **Motor Drive**:
The H5N2001LM-VB performs well in motor drive systems, especially in situations where high voltage and high current need to be handled. It can effectively drive motors and provide stable current control, suitable for industrial motor control and high power motor drive applications.
4. **High Power Switch**:
This MOSFET is suitable for high power switching circuits, especially when high current handling is required. Its high current capability and low on-resistance make it very reliable in power switching, current control and load switching applications, ensuring high efficiency and long life of high power switching circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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