中文
English
H5N1503P-VB Product details
Back to previous pageProduct introduction：
1. H5N1503P-VB MOSFET Product Introduction
The H5N1503P-VB is a high-power N-channel MOSFET in a TO-3P package, designed for applications that require high current handling capabilities. With a drain-source voltage (VDS) of 150V and a drain current (ID) capability of 90A, the device is ideal for high-efficiency power conversion and switching applications. The H5N1503P-VB uses Trench technology, which gives it an extremely low on-resistance (RDS(ON)) when turned on, thereby reducing energy losses and improving system efficiency. This MOSFET is ideal for industrial and consumer electronics that require high current and high efficiency.
The H5N1503P-VB is a high-power N-channel MOSFET in a TO-3P package, designed for applications that require high current handling capabilities. With a drain-source voltage (VDS) of 150V and a drain current (ID) capability of 90A, the device is ideal for high-efficiency power conversion and switching applications. The H5N1503P-VB uses Trench technology, which gives it an extremely low on-resistance (RDS(ON)) when turned on, thereby reducing energy losses and improving system efficiency. This MOSFET is ideal for industrial and consumer electronics that require high current and high efficiency.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 150V | 3V | 90A | 17mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 150V | 3V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 150V | 3V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
2. H5N1503P-VB MOSFET Detailed parameter description
- **Package**: TO-3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 150V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 17mΩ @ VGS = 10V
- **Drain current (ID)**: 90A
- **Technology**: Trench technology
- **Package**: TO-3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 150V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 17mΩ @ VGS = 10V
- **Drain current (ID)**: 90A
- **Technology**: Trench technology
Domain and module applications：
3. H5N1503P-VB MOSFET applicable fields and module application examples
1. **Electric vehicles and industrial motor drives**:
The high current handling capability (90A) and low on-resistance of the H5N1503P-VB make it very suitable for electric vehicles (EV) and industrial motor drive systems. In these applications, the MOSFET can efficiently control the start-up, operation and speed regulation of the motor while maintaining low power consumption and heat generation.
2. **Switching mode power supply (SMPS)**:
In switching mode power supplies, the 150V withstand voltage and high-efficiency conduction characteristics of the H5N1503P-VB make it an ideal choice. It can reduce conduction losses in high-frequency switching operations, improve the overall conversion efficiency of the power supply, and is suitable for server power supplies and high-power adapters.
3. **Uninterruptible Power Supply (UPS) System**:
For Uninterruptible Power Supply (UPS) System, the high current capability and stable performance of H5N1503P-VB can ensure continuous and stable power output when power is interrupted. Its low on-resistance characteristics can also reduce energy loss in the system and extend the battery power supply time.
4. **Solar Inverter**:
In the solar inverter, the high withstand voltage and high efficiency on-state characteristics of H5N1503P-VB make it suitable for handling high current input from solar panels and efficiently converting it into AC output. Its stable performance ensures long-term reliable operation of solar energy system.
Through these application examples, it can be seen that H5N1503P-VB is a MOSFET suitable for high current, high power demand applications, which can provide efficient and reliable power conversion and control solutions in various industrial and consumer electronic devices.
1. **Electric vehicles and industrial motor drives**:
The high current handling capability (90A) and low on-resistance of the H5N1503P-VB make it very suitable for electric vehicles (EV) and industrial motor drive systems. In these applications, the MOSFET can efficiently control the start-up, operation and speed regulation of the motor while maintaining low power consumption and heat generation.
2. **Switching mode power supply (SMPS)**:
In switching mode power supplies, the 150V withstand voltage and high-efficiency conduction characteristics of the H5N1503P-VB make it an ideal choice. It can reduce conduction losses in high-frequency switching operations, improve the overall conversion efficiency of the power supply, and is suitable for server power supplies and high-power adapters.
3. **Uninterruptible Power Supply (UPS) System**:
For Uninterruptible Power Supply (UPS) System, the high current capability and stable performance of H5N1503P-VB can ensure continuous and stable power output when power is interrupted. Its low on-resistance characteristics can also reduce energy loss in the system and extend the battery power supply time.
4. **Solar Inverter**:
In the solar inverter, the high withstand voltage and high efficiency on-state characteristics of H5N1503P-VB make it suitable for handling high current input from solar panels and efficiently converting it into AC output. Its stable performance ensures long-term reliable operation of solar energy system.
Through these application examples, it can be seen that H5N1503P-VB is a MOSFET suitable for high current, high power demand applications, which can provide efficient and reliable power conversion and control solutions in various industrial and consumer electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
