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H5N1501LM-E-VB Product details
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H5N1501LM-E-VB MOSFET Product Introduction
**H5N1501LM-E-VB** is a high-performance N-channel MOSFET in a TO263 package, suitable for applications requiring medium and high voltage processing. This MOSFET has a drain-source voltage (VDS) of 150V and a low on-resistance (RDS(ON)), while providing a drain current (ID) of up to 45A, making it ideal for power systems, load switches, and power management circuits. The H5N1501LM-E-VB uses Trench technology to achieve high efficiency and low losses, and is particularly suitable for modern electronic devices with high efficiency and compact design.
**H5N1501LM-E-VB** is a high-performance N-channel MOSFET in a TO263 package, suitable for applications requiring medium and high voltage processing. This MOSFET has a drain-source voltage (VDS) of 150V and a low on-resistance (RDS(ON)), while providing a drain current (ID) of up to 45A, making it ideal for power systems, load switches, and power management circuits. The H5N1501LM-E-VB uses Trench technology to achieve high efficiency and low losses, and is particularly suitable for modern electronic devices with high efficiency and compact design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 150V | 3V | 45A | 35mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 150V | 3V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 150V | 3V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
H5N1501LM-E-VB MOSFET Detailed parameter description
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain to source voltage (VDS)**: 150V
- **Gate to source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 35mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 45A
- **Technology**: Trench technology
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain to source voltage (VDS)**: 150V
- **Gate to source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 35mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 45A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
1. **Power converters and inverters**: The 150V high withstand voltage characteristics of the H5N1501LM-E-VB make it very suitable for use in power converters and inverters, especially in scenarios where medium-to-high voltage control and high current processing are required. Its low on-resistance can reduce power loss and improve conversion efficiency, making it an excellent performer in fields such as photovoltaic inverters and electric vehicle power modules.
2. **Motor drive**: In motor drive applications, the H5N1501LM-E-VB can be used as a high-current switching element. Its high current capability and low on-resistance can provide a stable drive current to ensure smooth operation of the motor, and is suitable for motor control modules in various industrial automation equipment and household appliances.
3. **Load switch**: The high current carrying capacity and medium-to-high voltage tolerance of the H5N1501LM-E-VB make it suitable for load switching applications, such as the main switch of a high-power power supply. In these applications, it can effectively control the on and off of high current loads while maintaining high efficiency and low loss.
4. **Uninterruptible Power Supply (UPS) System**: In UPS systems, this MOSFET can be used for high current switch control and power management. Its stable performance and efficient power handling capabilities ensure the reliability and efficiency of the system, and is particularly suitable for applications that require fast response and stable voltage output.
These application areas demonstrate the wide applicability of the H5N1501LM-E-VB MOSFET in power control, power management, and high current load handling, especially for modern electronic devices that require medium to high voltage and efficient switching performance.
1. **Power converters and inverters**: The 150V high withstand voltage characteristics of the H5N1501LM-E-VB make it very suitable for use in power converters and inverters, especially in scenarios where medium-to-high voltage control and high current processing are required. Its low on-resistance can reduce power loss and improve conversion efficiency, making it an excellent performer in fields such as photovoltaic inverters and electric vehicle power modules.
2. **Motor drive**: In motor drive applications, the H5N1501LM-E-VB can be used as a high-current switching element. Its high current capability and low on-resistance can provide a stable drive current to ensure smooth operation of the motor, and is suitable for motor control modules in various industrial automation equipment and household appliances.
3. **Load switch**: The high current carrying capacity and medium-to-high voltage tolerance of the H5N1501LM-E-VB make it suitable for load switching applications, such as the main switch of a high-power power supply. In these applications, it can effectively control the on and off of high current loads while maintaining high efficiency and low loss.
4. **Uninterruptible Power Supply (UPS) System**: In UPS systems, this MOSFET can be used for high current switch control and power management. Its stable performance and efficient power handling capabilities ensure the reliability and efficiency of the system, and is particularly suitable for applications that require fast response and stable voltage output.
These application areas demonstrate the wide applicability of the H5N1501LM-E-VB MOSFET in power control, power management, and high current load handling, especially for modern electronic devices that require medium to high voltage and efficient switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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