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H5N03LA-VB Product details

Product introduction:

1. Product Introduction

The H5N1503P-VB is a single N-channel MOSFET in a TO3P package. This device is designed to handle high voltage and high current applications, with a drain-source voltage (VDS) of 150V and a gate-source voltage (VGS) of ±20V. The device has a gate-source threshold voltage (Vth) of 3V, making it suitable for applications with higher drive voltages. The H5N1503P-VB uses advanced Trench technology, providing a low on-resistance (RDS(ON)) of 17mΩ @ VGS = 10V, and can handle drain currents (ID) of up to 90A. This makes it ideal for power electronics applications that require efficient switching and low power consumption.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 20V 0.5~1.5V 100A 6mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 20V 0.5~1.5V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 20V 0.5~1.5V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
2. Detailed parameter description

- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 150V
- **Gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 17mΩ @ VGS = 10V
- **Drain current (ID)**: 90A
- **Technology**: Trench
- **Operating temperature range**: -55°C to +175°C (For specific parameters, please refer to the product detailed data sheet)

Domain and module applications:

3. Applicable fields and module application examples

The high voltage and high current handling capabilities and low on-resistance of the H5N1503P-VB MOSFET make it excel in multiple fields and modules. Here are some specific application examples:

1. **Electric vehicle charger**: In electric vehicle chargers, the H5N1503P-VB can handle high voltages and high currents as a switching element, ensuring efficient power transmission and conversion. Its 150V drain-source voltage is well suited to handle the high voltage requirements common in electric vehicle chargers.

2. **Power converter**: In power converters, the H5N1503P-VB can be used for efficient DC-DC or AC-DC conversion. Its low on-resistance helps reduce power losses during the conversion process and improve overall conversion efficiency.

3. **Inverter**: In inverter applications, the H5N1503P-VB can operate reliably under high current conditions, making it suitable for high-power inverters such as solar inverters or uninterruptible power supply (UPS) systems.

4. **Industrial Motor Control**: The H5N1503P-VB is suitable for power switching in industrial motor control, especially in applications requiring high reliability and high efficiency. Its high current capability ensures that it can drive large industrial motors.

5. **Power Amplifier**: In power amplifiers, the H5N1503P-VB MOSFET can be used to amplify high-power signals, making it suitable for use in audio and RF applications that require high power output.

These application areas demonstrate the wide applicability of the H5N1503P-VB in high-voltage power conversion, charging and industrial control, and its importance in high-efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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