H5N03LA-VB Product details
Product introduction:
The H5N1503P-VB is a single N-channel MOSFET in a TO3P package. This device is designed to handle high voltage and high current applications, with a drain-source voltage (VDS) of 150V and a gate-source voltage (VGS) of ±20V. The device has a gate-source threshold voltage (Vth) of 3V, making it suitable for applications with higher drive voltages. The H5N1503P-VB uses advanced Trench technology, providing a low on-resistance (RDS(ON)) of 17mΩ @ VGS = 10V, and can handle drain currents (ID) of up to 90A. This makes it ideal for power electronics applications that require efficient switching and low power consumption.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 150V
- **Gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 17mΩ @ VGS = 10V
- **Drain current (ID)**: 90A
- **Technology**: Trench
- **Operating temperature range**: -55°C to +175°C (For specific parameters, please refer to the product detailed data sheet)
Domain and module applications:
The high voltage and high current handling capabilities and low on-resistance of the H5N1503P-VB MOSFET make it excel in multiple fields and modules. Here are some specific application examples:
1. **Electric vehicle charger**: In electric vehicle chargers, the H5N1503P-VB can handle high voltages and high currents as a switching element, ensuring efficient power transmission and conversion. Its 150V drain-source voltage is well suited to handle the high voltage requirements common in electric vehicle chargers.
2. **Power converter**: In power converters, the H5N1503P-VB can be used for efficient DC-DC or AC-DC conversion. Its low on-resistance helps reduce power losses during the conversion process and improve overall conversion efficiency.
3. **Inverter**: In inverter applications, the H5N1503P-VB can operate reliably under high current conditions, making it suitable for high-power inverters such as solar inverters or uninterruptible power supply (UPS) systems.
4. **Industrial Motor Control**: The H5N1503P-VB is suitable for power switching in industrial motor control, especially in applications requiring high reliability and high efficiency. Its high current capability ensures that it can drive large industrial motors.
5. **Power Amplifier**: In power amplifiers, the H5N1503P-VB MOSFET can be used to amplify high-power signals, making it suitable for use in audio and RF applications that require high power output.
These application areas demonstrate the wide applicability of the H5N1503P-VB in high-voltage power conversion, charging and industrial control, and its importance in high-efficiency applications.
Technical support:
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