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H4N03LA-VB Product details
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H4N03LA-VB MOSFET Product Introduction
The H4N03LA-VB is a single N-channel MOSFET in a TO252 package, designed for low-voltage switching applications that require efficient current handling capabilities. The device can withstand a drain-source voltage of 30V and has an extremely low on-resistance, making it ideal for use in circuits that require low losses and high efficiency. The H4N03LA-VB uses advanced trench technology to provide excellent conductivity and outstanding current handling capabilities, up to 100A. This gives it a significant advantage in high-power and high-efficiency applications.
The H4N03LA-VB is a single N-channel MOSFET in a TO252 package, designed for low-voltage switching applications that require efficient current handling capabilities. The device can withstand a drain-source voltage of 30V and has an extremely low on-resistance, making it ideal for use in circuits that require low losses and high efficiency. The H4N03LA-VB uses advanced trench technology to provide excellent conductivity and outstanding current handling capabilities, up to 100A. This gives it a significant advantage in high-power and high-efficiency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
H4N03LA-VB MOSFET Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Drain current (ID)**: 100A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Drain current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
H4N03LA-VB MOSFET Applications and Modules
H4N03LA-VB MOSFET has a wide range of applications in multiple fields and modules, especially where high efficiency and high current handling capability are required:
1. **Power Management**: H4N03LA-VB performs well in DC-DC converters and load switches. Its low on-resistance and high current handling capability enable it to achieve low power consumption and efficient power conversion, suitable for power management of high-performance computing and data center equipment.
2. **Power Tools**: In power tools such as electric drills and electric saws, the high current capability and low conduction loss of this MOSFET enable it to provide stable current control and longer battery life, while reducing heat generation to ensure equipment reliability and performance.
3. **Battery Management System (BMS)**: H4N03LA-VB is ideal for use in battery management systems for electric vehicles and other battery-driven devices. Its low on-resistance can minimize power losses and improve overall system efficiency and performance.
4. **Motor drive**: In small and medium-sized motor drive applications, H4N03LA-VB provides efficient current control and fast switching speed, which can ensure the smooth operation and high efficiency of the motor. It is widely used in home appliances, industrial automation and other fields.
These features make H4N03LA-VB an ideal choice for various applications that require efficient, high-current switching and control.
H4N03LA-VB MOSFET has a wide range of applications in multiple fields and modules, especially where high efficiency and high current handling capability are required:
1. **Power Management**: H4N03LA-VB performs well in DC-DC converters and load switches. Its low on-resistance and high current handling capability enable it to achieve low power consumption and efficient power conversion, suitable for power management of high-performance computing and data center equipment.
2. **Power Tools**: In power tools such as electric drills and electric saws, the high current capability and low conduction loss of this MOSFET enable it to provide stable current control and longer battery life, while reducing heat generation to ensure equipment reliability and performance.
3. **Battery Management System (BMS)**: H4N03LA-VB is ideal for use in battery management systems for electric vehicles and other battery-driven devices. Its low on-resistance can minimize power losses and improve overall system efficiency and performance.
4. **Motor drive**: In small and medium-sized motor drive applications, H4N03LA-VB provides efficient current control and fast switching speed, which can ensure the smooth operation and high efficiency of the motor. It is widely used in home appliances, industrial automation and other fields.
These features make H4N03LA-VB an ideal choice for various applications that require efficient, high-current switching and control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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