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H35N03J-VB Product details
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1. H35N03J-VB Product Introduction
H35N03J-VB is a single-N-Channel MOSFET in TO252 package, designed for low voltage and high current applications. It uses advanced trench technology to provide excellent conduction performance and low on-resistance, making it very suitable for efficient power management and current switching applications. The drain-source voltage (VDS) of H35N03J-VB is 20V, and the gate-source voltage (VGS) is ±20V. It can withstand large currents and achieve efficient conduction at low gate drive voltages. The maximum drain current (ID) is up to 100A, which is very suitable for high-performance applications that require high current handling capabilities.
H35N03J-VB is a single-N-Channel MOSFET in TO252 package, designed for low voltage and high current applications. It uses advanced trench technology to provide excellent conduction performance and low on-resistance, making it very suitable for efficient power management and current switching applications. The drain-source voltage (VDS) of H35N03J-VB is 20V, and the gate-source voltage (VGS) is ±20V. It can withstand large currents and achieve efficient conduction at low gate drive voltages. The maximum drain current (ID) is up to 100A, which is very suitable for high-performance applications that require high current handling capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. H35N03J-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=2.5V
- 4.5mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench technology
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=2.5V
- 4.5mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench technology
Domain and module applications：
3. Application fields and module examples
With its low on-resistance and high current handling capability, the H35N03J-VB MOSFET is suitable for multiple low-voltage, high-current applications.
1. **Power tools and battery management systems**:
The H35N03J-VB is suitable for power management and current switching applications in power tools and battery management systems. Its drain current capability of up to 100A can meet the needs of power tools for high-current switching, while the low on-resistance ensures that energy losses are minimized and improves the efficiency of the overall system.
2. **Automotive electronics**:
In automotive electronic systems, this MOSFET can be used for low-voltage, high-current power distribution and control applications such as power windows, power seats, and other on-board electrical appliances. The low threshold voltage and high current capability of the H35N03J-VB make it ideal for these applications, helping to improve the response speed and power efficiency of automotive electronic devices.
3. **DC-DC Converters**:
This MOSFET is suitable for use as a switching element in low-voltage DC-DC converters. Its low on-resistance and high current handling capability enable it to effectively reduce switching losses and improve the overall efficiency of the converter in these applications.
4. **Power Management Modules**:
H35N03J-VB can be used in a variety of low-voltage power management modules as a key switching element to control the flow of current and the distribution of power. Its efficient conduction performance and high current handling capability ensure the stability and efficiency of the power management module under high load conditions.
Through these application scenarios, the H35N03J-VB MOSFET demonstrates its superior performance in a low-voltage, high-current environment, making it an ideal choice for efficient power management and current control applications.
With its low on-resistance and high current handling capability, the H35N03J-VB MOSFET is suitable for multiple low-voltage, high-current applications.
1. **Power tools and battery management systems**:
The H35N03J-VB is suitable for power management and current switching applications in power tools and battery management systems. Its drain current capability of up to 100A can meet the needs of power tools for high-current switching, while the low on-resistance ensures that energy losses are minimized and improves the efficiency of the overall system.
2. **Automotive electronics**:
In automotive electronic systems, this MOSFET can be used for low-voltage, high-current power distribution and control applications such as power windows, power seats, and other on-board electrical appliances. The low threshold voltage and high current capability of the H35N03J-VB make it ideal for these applications, helping to improve the response speed and power efficiency of automotive electronic devices.
3. **DC-DC Converters**:
This MOSFET is suitable for use as a switching element in low-voltage DC-DC converters. Its low on-resistance and high current handling capability enable it to effectively reduce switching losses and improve the overall efficiency of the converter in these applications.
4. **Power Management Modules**:
H35N03J-VB can be used in a variety of low-voltage power management modules as a key switching element to control the flow of current and the distribution of power. Its efficient conduction performance and high current handling capability ensure the stability and efficiency of the power management module under high load conditions.
Through these application scenarios, the H35N03J-VB MOSFET demonstrates its superior performance in a low-voltage, high-current environment, making it an ideal choice for efficient power management and current control applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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