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H3055MJ-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
**H3055MJ-VB** is a single N-channel MOSFET in TO252 package, suitable for high current and low voltage applications. The maximum drain-source voltage (VDS) of the device is 30V and the maximum drain current (ID) is 70A. Its on-resistance (RDS(ON)) is 9mΩ at VGS of 4.5V and 7mΩ at VGS of 10V, with very low conduction losses. The H3055MJ-VB uses Trench technology to ensure high efficiency and reliability under high current loads. This makes it an ideal choice for power management and load switching applications.
**H3055MJ-VB** is a single N-channel MOSFET in TO252 package, suitable for high current and low voltage applications. The maximum drain-source voltage (VDS) of the device is 30V and the maximum drain current (ID) is 70A. Its on-resistance (RDS(ON)) is 9mΩ at VGS of 4.5V and 7mΩ at VGS of 10V, with very low conduction losses. The H3055MJ-VB uses Trench technology to ensure high efficiency and reliability under high current loads. This makes it an ideal choice for power management and load switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench
Domain and module applications：
3. Application fields and module examples
**H3055MJ-VB** MOSFET is suitable for the following fields and modules:
1. **Power management**: In power management modules such as DC-DC converters and battery management systems, this MOSFET can effectively reduce energy loss and improve conversion efficiency due to its low on-resistance and high current handling capability.
2. **Load switch**: In load switch applications, especially in circuits with high current requirements, such as power tools, household appliances and industrial equipment, this MOSFET can provide stable current control and low conduction loss to ensure efficient operation of the equipment.
3. **Automotive electronics**: In automotive electronic systems, H3055MJ-VB is suitable for motor control and power distribution modules, and its high current capability and low on-resistance ensure the reliability and durability of the system.
4. **High-efficiency drive circuit**: Suitable for scenarios requiring high current drive, such as high-power LED drivers and high-performance amplifiers. The low RDS(ON) characteristics of this MOSFET ensure low loss and high efficiency.
**H3055MJ-VB** MOSFET is suitable for the following fields and modules:
1. **Power management**: In power management modules such as DC-DC converters and battery management systems, this MOSFET can effectively reduce energy loss and improve conversion efficiency due to its low on-resistance and high current handling capability.
2. **Load switch**: In load switch applications, especially in circuits with high current requirements, such as power tools, household appliances and industrial equipment, this MOSFET can provide stable current control and low conduction loss to ensure efficient operation of the equipment.
3. **Automotive electronics**: In automotive electronic systems, H3055MJ-VB is suitable for motor control and power distribution modules, and its high current capability and low on-resistance ensure the reliability and durability of the system.
4. **High-efficiency drive circuit**: Suitable for scenarios requiring high current drive, such as high-power LED drivers and high-performance amplifiers. The low RDS(ON) characteristics of this MOSFET ensure low loss and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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