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H3055LJ-VB Product details
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H3055LJ-VB MOSFET Product Introduction
H3055LJ-VB is a single N-channel MOSFET using Trench technology, packaged in TO252. This MOSFET is designed for low-voltage and high-current applications, with a drain-source voltage (VDS) of 20V and a high drain current (ID) capability of 100A. Its extremely low on-resistance (RDS(ON)) enables it to perform well in low-voltage and high-efficiency circuits, especially for applications that require high current handling capabilities and high switching speeds.
H3055LJ-VB is a single N-channel MOSFET using Trench technology, packaged in TO252. This MOSFET is designed for low-voltage and high-current applications, with a drain-source voltage (VDS) of 20V and a high drain current (ID) capability of 100A. Its extremely low on-resistance (RDS(ON)) enables it to perform well in low-voltage and high-efficiency circuits, especially for applications that require high current handling capabilities and high switching speeds.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
H3055LJ-VB MOSFET Detailed parameter description
- **Package**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 2.5V
- 4.5mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 100A
- **Technology type**: Trench technology
- **Package**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 2.5V
- 4.5mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 100A
- **Technology type**: Trench technology
Domain and module applications：
Applications and modules of H3055LJ-VB MOSFET
H3055LJ-VB MOSFET is very suitable for use in low voltage and high current applications due to its high current handling capability and low on-resistance. Here are some typical application areas and modules:
1. **DC-DC converter**: In power management systems, H3055LJ-VB is very suitable as a switching element for low voltage DC-DC converters. It can efficiently handle large current conversion requirements and ensure output stability and conversion efficiency.
2. **Power tools**: H3055LJ-VB can be used in the drive circuit of power tools, especially those tools that require high current output, such as electric drills, electric wrenches, etc. Its high current handling capability and fast switching characteristics ensure efficient operation of the tools and stability for long-term use.
3. **Battery Management System (BMS)**: In the battery management system, H3055LJ-VB can be used as a switching element in the battery pack, responsible for the charge and discharge management of the battery. Its low on-resistance and high current capability help reduce power consumption and extend the battery life.
4. **Automotive Electronics**: In automotive electronics, such as power distribution modules and electric power steering systems, H3055LJ-VB can be used in various efficient power management and control circuits due to its high current handling capability to ensure the stable operation of the system.
In short, H3055LJ-VB is a MOSFET suitable for low-voltage and high-current applications. It is widely used in DC-DC conversion, power tools, battery management systems, and automotive electronics, providing efficient and stable performance guarantees.
H3055LJ-VB MOSFET is very suitable for use in low voltage and high current applications due to its high current handling capability and low on-resistance. Here are some typical application areas and modules:
1. **DC-DC converter**: In power management systems, H3055LJ-VB is very suitable as a switching element for low voltage DC-DC converters. It can efficiently handle large current conversion requirements and ensure output stability and conversion efficiency.
2. **Power tools**: H3055LJ-VB can be used in the drive circuit of power tools, especially those tools that require high current output, such as electric drills, electric wrenches, etc. Its high current handling capability and fast switching characteristics ensure efficient operation of the tools and stability for long-term use.
3. **Battery Management System (BMS)**: In the battery management system, H3055LJ-VB can be used as a switching element in the battery pack, responsible for the charge and discharge management of the battery. Its low on-resistance and high current capability help reduce power consumption and extend the battery life.
4. **Automotive Electronics**: In automotive electronics, such as power distribution modules and electric power steering systems, H3055LJ-VB can be used in various efficient power management and control circuits due to its high current handling capability to ensure the stable operation of the system.
In short, H3055LJ-VB is a MOSFET suitable for low-voltage and high-current applications. It is widely used in DC-DC conversion, power tools, battery management systems, and automotive electronics, providing efficient and stable performance guarantees.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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