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H2N7002-VB Product details
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H2N7002-VB MOSFET Product Introduction
**H2N7002-VB** is a high-performance N-Channel MOSFET packaged in SOT23-3. It uses Trench technology and is designed for low current and low voltage applications. The maximum drain-source voltage of this MOSFET is 60V, the gate-source voltage range is ±20V, and the threshold voltage is 1.7V. Its on-resistance is 3100mΩ at VGS=4.5V, 2800mΩ at VGS=10V, and the maximum drain current is 0.3A. This makes the H2N7002-VB particularly suitable for switching and amplification applications in small electronic devices.
**H2N7002-VB** is a high-performance N-Channel MOSFET packaged in SOT23-3. It uses Trench technology and is designed for low current and low voltage applications. The maximum drain-source voltage of this MOSFET is 60V, the gate-source voltage range is ±20V, and the threshold voltage is 1.7V. Its on-resistance is 3100mΩ at VGS=4.5V, 2800mΩ at VGS=10V, and the maximum drain current is 0.3A. This makes the H2N7002-VB particularly suitable for switching and amplification applications in small electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | 2800mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
Detailed parameter description
- **Package type**: SOT23-3
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ @ VGS = 4.5V
- 2800mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 0.3A
- **Technology**: Trench
- **Package type**: SOT23-3
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ @ VGS = 4.5V
- 2800mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 0.3A
- **Technology**: Trench
Domain and module applications：
Applications and modules
1. **Small switching circuits**:
The small package and low current characteristics of the H2N7002-VB make it very effective in small switching circuits. It can be used for low-power switching control, such as in portable devices and switching applications with low current loads, to ensure efficient and reliable switching operation.
2. **Electronic switch**:
Due to its low on-resistance and moderate current capability, this MOSFET is suitable for various electronic switching applications. In electronic switch modules, it is able to provide stable switching performance and is suitable for functions such as signal switching and power switching.
3. **Signal amplifier**:
The H2N7002-VB is suitable for low-power signal amplifiers, because its low current capability and small package make it suitable for circuits that require precise control and small size. In audio amplifiers and sensor signal amplification, it can provide effective amplification.
4. **Small Power Management**:
In small power management modules, this MOSFET can be used for power distribution and control. Its small SOT23-3 package is suitable for space-constrained applications such as embedded systems and mobile devices, providing efficient power switching and regulation functions.
1. **Small switching circuits**:
The small package and low current characteristics of the H2N7002-VB make it very effective in small switching circuits. It can be used for low-power switching control, such as in portable devices and switching applications with low current loads, to ensure efficient and reliable switching operation.
2. **Electronic switch**:
Due to its low on-resistance and moderate current capability, this MOSFET is suitable for various electronic switching applications. In electronic switch modules, it is able to provide stable switching performance and is suitable for functions such as signal switching and power switching.
3. **Signal amplifier**:
The H2N7002-VB is suitable for low-power signal amplifiers, because its low current capability and small package make it suitable for circuits that require precise control and small size. In audio amplifiers and sensor signal amplification, it can provide effective amplification.
4. **Small Power Management**:
In small power management modules, this MOSFET can be used for power distribution and control. Its small SOT23-3 package is suitable for space-constrained applications such as embedded systems and mobile devices, providing efficient power switching and regulation functions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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