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H10N65F-VB Product details
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H10N65F-VB MOSFET Product Introduction
**H10N65F-VB** is a high voltage N-channel MOSFET in TO220F package. This MOSFET uses Plannar technology and is designed to handle high voltage and high power applications, capable of withstanding drain-source voltages up to 650V. With its low on-resistance and high drain current capability, the H10N65F-VB is ideal for applications that require high voltage tolerance and high power handling, such as power management and power conversion systems.
**H10N65F-VB** is a high voltage N-channel MOSFET in TO220F package. This MOSFET uses Plannar technology and is designed to handle high voltage and high power applications, capable of withstanding drain-source voltages up to 650V. With its low on-resistance and high drain current capability, the H10N65F-VB is ideal for applications that require high voltage tolerance and high power handling, such as power management and power conversion systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | 830mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
H10N65F-VB MOSFET Detailed parameter description
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Drain to Source Voltage (VDS)**: 650V
- **Gate to Source Voltage (VGS)**: ±30V
- **Gate Threshold Voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 830mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 10A
- **Technology**: Plannar technology
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Drain to Source Voltage (VDS)**: 650V
- **Gate to Source Voltage (VGS)**: ±30V
- **Gate Threshold Voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 830mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 10A
- **Technology**: Plannar technology
Domain and module applications：
Application fields and module examples
1. **High voltage power converter**: The high drain-source voltage capability of the H10N65F-VB makes it ideal for use in high voltage power converters, such as inverters and buck-boost converters. In these applications, MOSFETs are able to handle high voltages and provide stable power conversion to ensure reliable operation of the equipment.
2. **Switching Power Supply (SMPS)**: In high voltage switching power supply designs, the H10N65F-VB can be used as the main switching device. Its lower on-resistance and higher current carrying capacity are suitable for applications that require high voltage tolerance and high power handling, improving power efficiency and reducing power losses.
3. **Power management system**: In various power management systems, such as switch modules in industrial equipment and high-power home appliances, the H10N65F-VB is able to provide reliable switching performance and high voltage withstand capability. This enables it to operate stably in high voltage environments and protect the system from voltage spikes and overloads.
4. **Lighting control**: In high-power lighting control systems, such as LED drivers and fluorescent lamp control circuits, the high voltage capability and stable switching performance of the H10N65F-VB make it suitable for controlling the on/off state of high-power lamps, providing efficient and reliable lighting solutions.
These applications demonstrate the wide applicability of the H10N65F-VB MOSFET in high-voltage and high-power environments, especially in power management and control systems that require high voltage resistance and reliable switching performance.
1. **High voltage power converter**: The high drain-source voltage capability of the H10N65F-VB makes it ideal for use in high voltage power converters, such as inverters and buck-boost converters. In these applications, MOSFETs are able to handle high voltages and provide stable power conversion to ensure reliable operation of the equipment.
2. **Switching Power Supply (SMPS)**: In high voltage switching power supply designs, the H10N65F-VB can be used as the main switching device. Its lower on-resistance and higher current carrying capacity are suitable for applications that require high voltage tolerance and high power handling, improving power efficiency and reducing power losses.
3. **Power management system**: In various power management systems, such as switch modules in industrial equipment and high-power home appliances, the H10N65F-VB is able to provide reliable switching performance and high voltage withstand capability. This enables it to operate stably in high voltage environments and protect the system from voltage spikes and overloads.
4. **Lighting control**: In high-power lighting control systems, such as LED drivers and fluorescent lamp control circuits, the high voltage capability and stable switching performance of the H10N65F-VB make it suitable for controlling the on/off state of high-power lamps, providing efficient and reliable lighting solutions.
These applications demonstrate the wide applicability of the H10N65F-VB MOSFET in high-voltage and high-power environments, especially in power management and control systems that require high voltage resistance and reliable switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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