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H07N60F-VB Product details
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1. H07N60F-VB Product Introduction
H07N60F-VB is a single-N-Channel MOSFET in TO220F package, designed for high voltage applications. It uses planar technology and has a drain-source voltage (VDS) capability of up to 650V, suitable for application scenarios that require high voltage tolerance and stable performance. H07N60F-VB has a high maximum drain current (ID) and moderate on-resistance (RDS(ON)), which enables it to perform well in high voltage switching and power conversion applications. Its package design (TO220F) provides good heat dissipation performance and is suitable for use in high power environments.
H07N60F-VB is a single-N-Channel MOSFET in TO220F package, designed for high voltage applications. It uses planar technology and has a drain-source voltage (VDS) capability of up to 650V, suitable for application scenarios that require high voltage tolerance and stable performance. H07N60F-VB has a high maximum drain current (ID) and moderate on-resistance (RDS(ON)), which enables it to perform well in high voltage switching and power conversion applications. Its package design (TO220F) provides good heat dissipation performance and is suitable for use in high power environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. H07N60F-VB Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
- **Maximum drain current (ID)**: 7A
- **Technology**: Planar technology
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
- **Maximum drain current (ID)**: 7A
- **Technology**: Planar technology
Domain and module applications：
3. Applications and Module Examples
The high voltage and high current handling capabilities of the H07N60F-VB MOSFET make it suitable for multiple high voltage and power-intensive applications.
1. **High Voltage Power Converter**:
In high voltage DC-DC converters, the H07N60F-VB can be used as the main switching element. Its drain-source voltage capability of up to 650V is suitable for power conversion applications that require high voltage handling, ensuring efficient power conversion and stable output.
2. **Power Factor Correction (PFC) Circuit**:
In power factor correction circuits, the H07N60F-VB is able to handle high voltages and provide stable switching performance. Its planar technology makes it perform well in high voltage PFC modules, helping to improve the overall power factor and energy efficiency.
3. **High Voltage Switching Applications**:
This MOSFET is suitable for scenarios that require high voltage switching, such as high voltage load switching or high voltage relay driving. The high voltage tolerance and stability of the H07N60F-VB enable it to provide reliable switching operation in these applications.
4. **Power supply system**:
In the power supply system, the H07N60F-VB can be used for high voltage power management to help achieve efficient power conversion and regulation. It is suitable for various industrial power supply systems and high power applications, providing stable performance in high voltage environments.
Through these application scenarios, the H07N60F-VB MOSFET has shown reliable performance in high voltage and high power environments, suitable for a variety of modern electronic devices and power management systems.
The high voltage and high current handling capabilities of the H07N60F-VB MOSFET make it suitable for multiple high voltage and power-intensive applications.
1. **High Voltage Power Converter**:
In high voltage DC-DC converters, the H07N60F-VB can be used as the main switching element. Its drain-source voltage capability of up to 650V is suitable for power conversion applications that require high voltage handling, ensuring efficient power conversion and stable output.
2. **Power Factor Correction (PFC) Circuit**:
In power factor correction circuits, the H07N60F-VB is able to handle high voltages and provide stable switching performance. Its planar technology makes it perform well in high voltage PFC modules, helping to improve the overall power factor and energy efficiency.
3. **High Voltage Switching Applications**:
This MOSFET is suitable for scenarios that require high voltage switching, such as high voltage load switching or high voltage relay driving. The high voltage tolerance and stability of the H07N60F-VB enable it to provide reliable switching operation in these applications.
4. **Power supply system**:
In the power supply system, the H07N60F-VB can be used for high voltage power management to help achieve efficient power conversion and regulation. It is suitable for various industrial power supply systems and high power applications, providing stable performance in high voltage environments.
Through these application scenarios, the H07N60F-VB MOSFET has shown reliable performance in high voltage and high power environments, suitable for a variety of modern electronic devices and power management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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