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H06N60F-VB Product details
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H06N60F-VB MOSFET Product Introduction
H06N60F-VB is a single N-channel MOSFET using Plannar technology and packaged in TO220F. This MOSFET is designed for high voltage applications, can withstand drain-source voltage (VDS) up to 650V, and provides high current handling capability. Its relatively low on-resistance and high withstand voltage performance make it very suitable for use in power management and power control systems that require high voltage switching.
H06N60F-VB is a single N-channel MOSFET using Plannar technology and packaged in TO220F. This MOSFET is designed for high voltage applications, can withstand drain-source voltage (VDS) up to 650V, and provides high current handling capability. Its relatively low on-resistance and high withstand voltage performance make it very suitable for use in power management and power control systems that require high voltage switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
H06N60F-VB MOSFET Detailed parameter description
- **Package**: TO220F
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 7A
- **Technology type**: Plannar technology
- **Package**: TO220F
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 7A
- **Technology type**: Plannar technology
Domain and module applications：
Application fields and modules of H06N60F-VB MOSFET
The high voltage and high current capabilities of H06N60F-VB MOSFET make it excel in multiple high voltage and power management applications. Here are some typical application fields and modules:
1. **High voltage power conversion**: Due to its high withstand voltage capability of 650V, H06N60F-VB is very suitable for use in high voltage power converters and inverters. This makes it an ideal choice for high power power supply and conversion modules that can stably handle high voltage input and output.
2. **Power switching**: In power switching applications, H06N60F-VB can be used to control high power loads such as motors, electric heaters and transformers. Although its on-resistance is relatively high, its high withstand voltage and high maximum drain current enable it to handle larger power loads.
3. **Industrial Control**: In industrial control systems, such as motor drive and power regulation circuits, the high voltage and high current handling capabilities of the H06N60F-VB can meet the system's needs for high voltage and high reliability. Its stable switching characteristics can improve the performance and reliability of industrial equipment.
4. **Lighting Control**: The H06N60F-VB is also suitable for high-power lighting systems, such as high-intensity discharge lamps (HID) and high-power fluorescent lamps. In these applications, it can be used as a switching element for the control and regulation of lamps to ensure the efficient operation of the lighting system.
In general, the H06N60F-VB is a high-voltage, high-power handling MOSFET that is very suitable for applications requiring high voltage and high power, including power conversion, power switching, industrial control, and lighting systems.
The high voltage and high current capabilities of H06N60F-VB MOSFET make it excel in multiple high voltage and power management applications. Here are some typical application fields and modules:
1. **High voltage power conversion**: Due to its high withstand voltage capability of 650V, H06N60F-VB is very suitable for use in high voltage power converters and inverters. This makes it an ideal choice for high power power supply and conversion modules that can stably handle high voltage input and output.
2. **Power switching**: In power switching applications, H06N60F-VB can be used to control high power loads such as motors, electric heaters and transformers. Although its on-resistance is relatively high, its high withstand voltage and high maximum drain current enable it to handle larger power loads.
3. **Industrial Control**: In industrial control systems, such as motor drive and power regulation circuits, the high voltage and high current handling capabilities of the H06N60F-VB can meet the system's needs for high voltage and high reliability. Its stable switching characteristics can improve the performance and reliability of industrial equipment.
4. **Lighting Control**: The H06N60F-VB is also suitable for high-power lighting systems, such as high-intensity discharge lamps (HID) and high-power fluorescent lamps. In these applications, it can be used as a switching element for the control and regulation of lamps to ensure the efficient operation of the lighting system.
In general, the H06N60F-VB is a high-voltage, high-power handling MOSFET that is very suitable for applications requiring high voltage and high power, including power conversion, power switching, industrial control, and lighting systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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